SIR888DP Search Results

SIR888DP

Contextual Info: SPICE Device Model SIR888DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

M 9587

Abstract: transistor m 9587 transistor c 4793 7392 8746 transistor 5586 AN609 SiR888DP
Contextual Info: SiR888DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: New Product SiR888DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 a RDS(on) (Ω) ID (A) 0.00325 at VGS = 10 V 40g 0.0040 at VGS = 4.5 V 40g Qg (Typ.) 35.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested

SIR888DP

Contextual Info: SPICE Device Model SIR888DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: New Product SiR888DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 a RDS(on) (Ω) ID (A) 0.00325 at VGS = 10 V 40g 0.0040 at VGS = 4.5 V 40g Qg (Typ.) 35.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested

Contextual Info: New Product SiR888DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 a RDS(on) (Ω) ID (A) 0.00325 at VGS = 10 V 40g 0.0040 at VGS = 4.5 V 40g Qg (Typ.) 35.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested

Contextual Info: New Product SiR888DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 a RDS(on) (Ω) ID (A) 0.00325 at VGS = 10 V 40g 0.0040 at VGS = 4.5 V 40g Qg (Typ.) 35.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested

Contextual Info: New Product SiR888DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 a RDS(on) (Ω) ID (A) 0.00325 at VGS = 10 V 40g 0.0040 at VGS = 4.5 V 40g Qg (Typ.) 35.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested

TB-17

Abstract: SiR888DP SIR888DP-T1-GE3
Contextual Info: New Product SiR888DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 a RDS(on) (Ω) ID (A) 0.00325 at VGS = 10 V 40g 0.0040 at VGS = 4.5 V 40g Qg (Typ.) 35.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Arduino Mega2560

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Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

220v AC voltage stabilizer schematic diagram

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585