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    SKB10N60A Search Results

    SKB10N60A Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SKB10N60A
    Infineon Technologies Fast IBGT in NPT Technology with soft, fast recovery anti-parallel EmCon Diode Original PDF 446.5KB 14
    SKB10N60A
    Infineon Technologies Fast IGBT in NPT-Technology with Soft, Fast Recovery Anti-Parallel EmCon Diode Original PDF 446.74KB 14
    SKB10N60A
    Infineon Technologies IGBT with Anti-Parallel Diode; Package: PG-TO263-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: TO-220; VCE (max): 600.0 V; IC(max) @ 25°: 21.0 A; IC(max) @ 100°: 10.9 A Original PDF 1.16MB 13
    SKB10N60AATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 20A 92W TO263-3 Original PDF 566.94KB

    SKB10N60A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k10n60

    Abstract: SKB10N60A
    Contextual Info: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    SKB10N60A SKB10N60A k10n60 PDF

    K10N60

    Abstract: SKB10N60A ND marking
    Contextual Info: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    SKB10N60A P-TO-220-3-45 K10N60 SKB10N60A ND marking PDF

    SKP10N60A

    Contextual Info: SKP10N60A Preliminary SKB10N60A, SKW10N60A Fast-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original
    SKP10N60A SKB10N60A, SKW10N60A SKP10N60A SKB10N60A SKW10N60A O-220AB O-263AB O-247AC Q67040-S4458 PDF

    SKP10N60A

    Abstract: SKB10N60A SKW10N60A Q67040-S4459 Q67040-S4458 fast recovery diode 1000v 10A 100w 5a IGBT
    Contextual Info: SKP10N60A, SKB10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original
    SKP10N60A, SKB10N60A SKW10N60A P-TO-220-3-1 O-220AB) P-TO-263-3-2 P-TO-247-3-1 O-263AB) O-247AC) O-220AB SKP10N60A SKB10N60A SKW10N60A Q67040-S4459 Q67040-S4458 fast recovery diode 1000v 10A 100w 5a IGBT PDF

    k10n60

    Contextual Info: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    SKB10N60A SKB10N60A k10n60 PDF

    SKP10N60A

    Abstract: 100w 5a IGBT Q67040-S4458 Q67040-S4459 SKP10N60 SKB10N60A SKW10N60A
    Contextual Info: SKP10N60A, SKB10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original
    SKP10N60A, SKB10N60A SKW10N60A P-TO-220-3-1 O-220AB) P-TO-263-3-2 P-TO-247-3-1 O-263AB) O-247AC) O-220AB SKP10N60A 100w 5a IGBT Q67040-S4458 Q67040-S4459 SKP10N60 SKB10N60A SKW10N60A PDF

    k10n60

    Abstract: PG-TO-263-3-2 SKB10N60A diode smd marking 5P
    Contextual Info: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,


    Original
    SKB10N60A k10n60 PG-TO-263-3-2 SKB10N60A diode smd marking 5P PDF

    Contextual Info: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,


    Original
    SKB10N60A PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original
    2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original
    lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF