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    Infineon Technologies AG SKW20N60HSFKSA1

    IGBT 600V 36A 178W TO247-3
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    Rochester Electronics SKW20N60HSFKSA1 2,400 1
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    SKW20N60HS Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SKW20N60HS Infineon Technologies High Speed IGBT in NPT-Technology Original PDF
    SKW20N60HS Infineon Technologies 20A 600V TO247 IGBT+Diode Original PDF
    SKW20N60HSFKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 36A 178W TO247-3 Original PDF

    SKW20N60HS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SGP20N60HS

    Abstract: SGW20N60HS SKP20N60HS SKW20N60HS IGBT FF 450
    Text: SKP20N60HS SKW20N60HS Preliminary High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:


    Original     		PDF SKP20N60HS SKW20N60HS P-TO-220-3-1 O-220AB) P-TO-247-3-1 O-247AC) SGP20N60HS O220AB Q67040-S4498 SGW20N60HS SGP20N60HS SGW20N60HS SKP20N60HS SKW20N60HS IGBT FF 450

    k20N60hs

    Abstract: k20n60
    Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW20N60HS PG-TO-247-3-21 SKW20N60HS k20N60hs k20n60

    SKW20N60HS

    Abstract: No abstract text available
    Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW20N60HS P-TO-247-3-1 O-247AC) O-247AC Q67040-S4502 Aug-02 SKW20N60HS

    Diode 400V 20A

    Abstract: SKW20N60HS
    Text: Preliminary Datasheet SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation 12 µJ/A • Short circuit withstand time – 10 µs • NPT-Technology for 600V applications offers: - parallel switching capability - very tight parameter distribution


    Original     		PDF SKW20N60HS O-247AC Q67040-S4242-A001 Sep-01 Diode 400V 20A SKW20N60HS

    k20n60

    Abstract: k20N60hs RY 227 Tf 227 10A PG-TO-247-3 igbt 400V 20A SKW20N60HS
    Text: SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW20N60HS PG-TO-247-3 K20N60HS k20n60 k20N60hs RY 227 Tf 227 10A PG-TO-247-3 igbt 400V 20A SKW20N60HS

    g20n60hs

    Abstract: No abstract text available
    Text: SKP20N60HS SKW20N60HS Preliminary High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:


    Original     		PDF SKP20N60HS SKW20N60HS PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) G20N60HS

    k20N60hs

    Abstract: K20N60 power Diode 400V 20A
    Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW20N60HS PG-TO-247-3-21 SKW20N60HS k20N60hs K20N60 power Diode 400V 20A

    k20N60hs

    Abstract: k20n60
    Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW20N60HS PG-TO-247-3-1 Q67040-S4502 PG-TO-247-3-1 O-247AC) SKW20N60HS k20N60hs k20n60

    k20N60hs

    Abstract: k20n60
    Text: SKW20N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW20N60HS PG-TO-247-3-1 Q67040-S4502 PG-TO-247-3-1 O-247AC) SKW20N60HS k20N60hs k20n60

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW20N60HS SKW20N60HS O-247AC Q67040-S4502 Jan-02

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    igbt dimmer

    Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
    Text: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling


    Original     		PDF B152-H7942-X-X-7600 igbt dimmer SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3

    IGBT SKW30N60HS

    Abstract: igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a Measurement of stray inductance for IGBT igbt 1200V 20A igbt welding machine IGBT parallel
    Text: High Speed IGBT 600V in NPT Technology for Welding Applications S. Cordes, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : NPT Technologie : The key component for power Electronic applications – the power switch - is still a


    Original     		PDF 10kHz O-247 TC100 SGP02N60HS SGP04N60HS SGP06N60HS SGP20N60HS SGW20N60HS SGP30N60HS SGW30N60HS IGBT SKW30N60HS igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a Measurement of stray inductance for IGBT igbt 1200V 20A igbt welding machine IGBT parallel