SMMJT350T1G Search Results
SMMJT350T1G Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SMMJT350T1G |
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SMMJT350 - TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 110.76KB | 4 |
SMMJT350T1G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SMMJT350T1G
Abstract: marking code E3 sot223 306 marking code transistor
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Original |
MMJT350T1G, SMMJT350T1G AEC-Q101 MMJT350T1/D marking code E3 sot223 306 marking code transistor | |
MMJTContextual Info: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage − |
Original |
MMJT350T1G, SMMJT350T1G MMJT350T1/D MMJT | |
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Contextual Info: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage |
Original |
MMJT350T1G AEC-Q101 OT-223 MMJT350T1/D |