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    SPP07N60S5 Price and Stock

    Infineon Technologies AG SPP07N60S5

    MOSFET N-CH 650V 7.3A TO220-3
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    DigiKey SPP07N60S5 Tube 500
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    Ameya Holding Limited SPP07N60S5 1,668
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    ComSIT USA SPP07N60S5 100
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    Velocity Electronics SPP07N60S5 194
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    Infineon Technologies AG SPP07N60S5XKSA1

    LOW POWER_LEGACY
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    Infineon Technologies AG SPP07N60S5HKSA1

    LOW POWER_LEGACY
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    SPP07N60S5 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP07N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP07N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.60 ?, 7.3A Original PDF
    SPP07N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP07N60S5 Infineon Technologies Cool MOS Power-Transistor Original PDF
    SPP07N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP07N60S5HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPP07N60S5XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF

    SPP07N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07N60S5

    Abstract: No abstract text available
    Text: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated


    Original     		PDF SPP07N60S5 SPI07N60S5 P-TO220-3-1 PG-TO262-3 PG-TO220-3-1 SPI07N60S5 PG-TO220-3-1 Q67040-S4172 PG-TO262-3 07N60S5

    Untitled

    Abstract: No abstract text available
    Text: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3-1 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated


    Original     		PDF SPP07N60S5 SPI07N60S5 P-TO220-3-1 PG-TO262-3-1 PG-TO220-3-1 SPI07N60S5 PG-TO220-3-1 Q67040-S4172 PG-TO262

    07n60s5

    Abstract: infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5
    Text: SPP07N60S5, SPB07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 P-TO262 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated


    Original     		PDF SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP07N60S5 Q67040-S4172 07n60s5 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5

    07n60s5

    Abstract: 07N60 infineon 07n60s5 SPPX3N60S5 SPB07N60S5 SPI07N60S5 SPP07N60S5 transistor 07n60s5
    Text: SPI07N60S5 SPP07N60S5, SPB07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPI07N60S5 SPP07N60S5, SPB07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPPx3N60S5/SPBx3N60S5 SPP07N60S5 Q67040-S4172 07n60s5 07N60 infineon 07n60s5 SPPX3N60S5 SPB07N60S5 SPI07N60S5 SPP07N60S5 transistor 07n60s5

    07n60s5

    Abstract: transistor 07n60s5 infineon 07n60s5 Q67040-S4172 Q67040-S4328 SMD TRANSISTOR MARKING 2.x
    Text: SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.6 Ω • Optimized capacitances


    Original     		PDF SPI07N60S5 SPP07N60S5, SPB07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP07N60S5 SPB07N60S5 SPI07N60S5 P-TO220-3-1 07n60s5 transistor 07n60s5 infineon 07n60s5 Q67040-S4172 Q67040-S4328 SMD TRANSISTOR MARKING 2.x

    07n60s5

    Abstract: transistor 07n60s5 Q67040-S4172 SPB07N60S5 SPI07N60S5 SPP07N60S5 infineon 07n60s5
    Text: SPP07N60S5, SPB07N60S5 SPI07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 P-TO262 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP07N60S5 Q67040-S4172 07N60S5 07n60s5 transistor 07n60s5 Q67040-S4172 SPB07N60S5 SPI07N60S5 SPP07N60S5 infineon 07n60s5

    07n60s5

    Abstract: SPI07N60S5 SPP07N60S5
    Text: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262 • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		PDF SPP07N60S5 SPI07N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4172 07N60S5 07n60s5 SPI07N60S5 SPP07N60S5

    07N60S5

    Abstract: SIEMENS 07N60S5 SPB07N60S5 SPP07N60S5 07N60 WA80
    Text: SPP07N60S5 SPB07N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPP07N60S5 SPB07N60S5 SPPx3N60S5/SPBx3N60S5 SPP07N60S5 P-TO220-3-1 P-TO263-3-2 07N60S5 Q67040-S4172 07N60S5 SIEMENS 07N60S5 SPB07N60S5 07N60 WA80

    07N60S5

    Abstract: 07N60 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5 C2608 Q67040-S4172
    Text: SPI07N60S5 Preliminary data SPP07N60S5, SPB07N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·


    Original     		PDF SPI07N60S5 SPP07N60S5, SPB07N60S5 SPPx3N60S5/SPBx3N60S5 P-TO220-3-1 07N60S5 Q67040-S4172 P-TO263-3-2 07N60S5 07N60 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5 C2608 Q67040-S4172

    07n60s5

    Abstract: SPI07N60S5 SPP07N60S5 Q67040-S4328
    Text: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262 • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		PDF SPP07N60S5 SPI07N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4172 07N60S5 07n60s5 SPI07N60S5 SPP07N60S5 Q67040-S4328

    transistor 07n60s5

    Abstract: 07n60s5 infineon 07n60s5
    Text: SPP07N60S5, SPB07N60S5 SPI07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS on in TO 220 • Ultra low gate charge P-TO262 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP07N60S5 P-TO220-3-1 transistor 07n60s5 07n60s5 infineon 07n60s5

    Untitled

    Abstract: No abstract text available
    Text: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262 • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		PDF SPP07N60S5 SPI07N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4172 07N60S5

    07N60S5

    Abstract: infineon 07n60s5 SPB07N60S5 SPP07N60S5
    Text: SPP07N60S5 SPB07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP07N60S5 SPB07N60S5 SPPx3N60S5/SPBx3N60S5 SPP07N60S5 P-TO220-3-1 07N60S5 Q67040-S4172 P-TO263-3-2 07N60S5 infineon 07n60s5 SPB07N60S5

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    6 PIN SMD IC FOR SMPS

    Abstract: 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet
    Text: Version 1.1 February 2001 Application Note AN-CoolMOS-03 HOW TO SELECT THE RIGHT COOLMOS AND ITS POWER HANDLING CAPABILITY Author: Luo Junyang, Jeoh Meng Kiat, Marco Puerschel and Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion


    Original     		PDF AN-CoolMOS-03 Room14J1 Room1101 6 PIN SMD IC FOR SMPS 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet

    irfp460 dc welding circuit diagram

    Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers


    Original     		PDF AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    07n60s5

    Abstract: SPP07N60S5 PG-TO263-3-2 SPB07N60S5 transistor 07n60s5
    Text: SPB07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.6 Ω ID 7.3 A PG-TO263 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPB07N60S5 PG-TO263 Q67040-S4185 07N60S5 07n60s5 SPP07N60S5 PG-TO263-3-2 SPB07N60S5 transistor 07n60s5

    Untitled

    Abstract: No abstract text available
    Text: SPB07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.6 Ω ID 7.3 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB07N60S5 P-TO263-3-2 SPB07N60S5 Q67040-S4185 07N60S5

    Untitled

    Abstract: No abstract text available
    Text: SPB07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.6 Ω ID 7.3 A PG-TO263 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPB07N60S5 PG-TO263 Q67040-S4185 07N60S5