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    STGW40H65DFB Price and Stock

    STMicroelectronics STGW40H65DFB-4

    IGBT
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    DigiKey STGW40H65DFB-4 Tube 558 1
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    Avnet Americas STGW40H65DFB-4 Tray 15 Weeks 600
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    TME STGW40H65DFB-4 1
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    Avnet Silica STGW40H65DFB-4 16 Weeks 30
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    STMicroelectronics STGW40H65DFB

    IGBT TRENCH FS 650V 80A TO247
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    DigiKey STGW40H65DFB Tube 1
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    Avnet Americas STGW40H65DFB Bulk 15 Weeks, 6 Days 1
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    STGW40H65DFB Tube 15 Weeks 600
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    Mouser Electronics STGW40H65DFB 1,926
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    Verical STGW40H65DFB 570 3
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    STGW40H65DFB 72 57
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    Arrow Electronics STGW40H65DFB 570 15 Weeks 1
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    STGW40H65DFB 1 99 Weeks 1
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    Newark STGW40H65DFB Bulk 78 1
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    STMicroelectronics STGW40H65DFB 1,926 1
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    Future Electronics STGW40H65DFB Tube 15 Weeks 600
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    STGW40H65DFB Tube 15 Weeks 600
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    STGW40H65DFB Tube 15 Weeks 600
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    TME STGW40H65DFB 3 1
    • 1 $2.94
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    Avnet Silica STGW40H65DFB 16 Weeks 30
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    Win Source Electronics STGW40H65DFB 5,640
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    STGW40H65DFB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGW40H65DFB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 283W TO-247 Original PDF
    STGW40H65DFB-4 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT Original PDF

    STGW40H65DFB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V


    Original
    PDF STGW40H65DFB STGWT40H65DFB O-247 SC12850 DocID024363

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V


    Original
    PDF STGW40H65DFB STGWT40H65DFB O-247 SC12850 DocID024363

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V


    Original
    PDF STGW40H65DFB STGWT40H65DFB O-247 SC12850 DocID024363

    STGW40H65DFB

    Abstract: GWT40H65DFB
    Text: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2 3 3 2 1 TO-247 1  Very low saturation voltage: VCE sat = 1.65 V


    Original
    PDF STGW40H65DFB STGWT40H65DFB O-247 DocID024363 GWT40H65DFB

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65FB STGWT40H65FB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW40H65FB STGWT40H65FB O-247 DocID025171

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • High speed switching series • Minimized tail current 3 2 1 TO-3PF


    Original
    PDF STGW40H65FB, STGFW40H65FB, STGWT40H65FB O-247 DocID025171

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65FB STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW40H65FB STGWT40H65FB O-247 DocID025171

    GW40H65FB

    Abstract: GWT40H65FB
    Text: STGW40H65FB STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW40H65FB STGWT40H65FB O-247 DocID025171 GW40H65FB GWT40H65FB

    inverter welding machine circuit board

    Abstract: igbt inverter welder service manual IGBT welder circuit power variation circuit for arc welding inverter arc welder circuit inverter welder circuit igbt arc welder welder FERRITE TRANSFORMER design
    Text: AN4638 Application note Welding machines: V and HB series IGBTs on two-switch forward converters Anselmo Liberti, Rosario Gulino Introduction The two-switch forward converter also known as asymmetrical half-bridge forward converter is a popular topology often used in industrial welding machines with low-tomedium power requirements. The inverter stage in this hard-switched forward topology


    Original
    PDF AN4638 DocID027309 inverter welding machine circuit board igbt inverter welder service manual IGBT welder circuit power variation circuit for arc welding inverter arc welder circuit inverter welder circuit igbt arc welder welder FERRITE TRANSFORMER design