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    STMicroelectronics STK22N6F3

    MOSFET N-CH 60V 22A POLARPAK
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    STK22N Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STK22N05 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STK22N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STK22N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STK22N06 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STK22N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STK22N6F3 STMicroelectronics N-channel 60 V, 0.0048 O, 22 A, PolarPAK STripFET Power MOSFET Original PDF

    STK22N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STK22N05

    Abstract: No abstract text available
    Text: STK22N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STK22N05 50 V < 0.065 Ω 22 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


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    PDF STK22N05 100oC 175oC OT-82 OT-194 STK22N05

    STK22N6F3

    Abstract: No abstract text available
    Text: STK22N6F3 N-channel 60 V, 0.0055 Ω, 22 A, PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max STK22N6F3 60 V < 0.006 Ω • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge


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    PDF STK22N6F3 2002/95/EC STK22N6F3

    STK22N6F3

    Abstract: No abstract text available
    Text: STK22N6F3 N-channel 60 V, 0.0055 Ω, 22 A, PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max STK22N6F3 60 V < 0.006 Ω • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge


    Original
    PDF STK22N6F3 2002/95/EC STK22N6F3

    STK22N6F3

    Abstract: JESD97
    Text: STK22N6F3 N-channel 60 V, 0.0048 Ω, 22 A, PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on max STK22N6F3 60 V < 0.006 Ω • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)


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    PDF STK22N6F3 2002/95/EC STK22N6F3 JESD97

    STK22N06

    Abstract: No abstract text available
    Text: STK22N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STK22N06 60 V < 0.065 Ω 22 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


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    PDF STK22N06 100oC 175oC OT-82 OT-194 STK22N06

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    STY112N65M5

    Abstract: STB46NF30 STP65NF06 STL120N2VH5 STx30NF20 STZ150NF55T STx7N52K3 STW7NK90Z STW25N95K3 STS7PF30L ST
    Text: Power MOSFETs Selection guide February 2009 www.st.com/pmos Ordering information Technology digits may be placed also at the end of the part number. 300 500 600 650 0.09 0.05 0.054 0.085 0.115 0.14 0.19 0.26 0.32 0.38 0.56 0.78 0.035 0.06 0.088 0.13 0.165


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    PDF STP30NM30N STE70NM50 STW55NM50N STW43NM50N STx30NM50N STx25NM50Ny STx21NM50Ny STx16NM50Ny STx13NM50Ny STx12NM50N STY112N65M5 STB46NF30 STP65NF06 STL120N2VH5 STx30NF20 STZ150NF55T STx7N52K3 STW7NK90Z STW25N95K3 STS7PF30L ST

    L9943

    Abstract: transistor tda2003 CAR ALTERNATOR VOLTAGE REGULATOR l4949nd STP65N06 buz11 in motor driver circuit RB040-40T CAR ALTERNATOR hall switch ignition MOSFET IGNITION
    Text: AUTOMOTIVE RECOMMENDED PRODUCTS FROM SGS-THOMSON SPECIAL FUNCTIONS Type Number L4620 L9610C/11C L9686 L9700 L9703 L9704 FUEL INJECTION Description Liquid Level Alarm PWM Powermos Controller Automotive Indicator Hex Precision Limiter Octal Ground Contact Monitoring Circuit


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    PDF L4620 L9610C/11C L9686 L9700 L9703 L9704 L2720/2/4 TDA1151 TDA1154 TDA7275A L9943 transistor tda2003 CAR ALTERNATOR VOLTAGE REGULATOR l4949nd STP65N06 buz11 in motor driver circuit RB040-40T CAR ALTERNATOR hall switch ignition MOSFET IGNITION

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON iL iO M iQ £ I S T K 2 2 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R DS(on) Id STK22N 05 50 V < 0.065 a 22 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


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    PDF STK22N

    Untitled

    Abstract: No abstract text available
    Text: 7*^237 QG4bl31 l h ö « S f i T H _ *57 SGSTHOMSON S T K 2 2 N06 « [R ìm [E C T É M fl g S N - CHANNEL ENH A N C EM EN T MODE PO W ER MOS TRAN SISTO R TYPE V dss R oS (o n Id STK22N06 60 V < 0.065 £2 22 A . • ■ . . . . ■ TYPICAL Rds(oh) = 0.048 £2


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    PDF QG4bl31 STK22N06 OT-82 OT-194

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡U È T O « S T K 22 N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK22N05 . . • . . . ■ . R D S o n Id < 0.065 Q. 22 A dss 50 V TYPICAL RDs(on) = 0.048 Q. AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STK22N05 OT-194 P032B

    Untitled

    Abstract: No abstract text available
    Text: £ T 7 Ä 7 # S G M S - T H O M S f i» [ L [ iO S O N T * S S T K 2 2 N 0 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR . • ■ . . . TYPE V dss R dS(oîi Id STK22N05 50 V 0.065 Q 22 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    PDF STK22N05 OT-82 OT-194

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: £jï SGS-THOMSON ULKgraMOeS S T K 2 2 N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TK22N 06 . . . . . . . . V dss 60 V R D S o n Id < 0 .0 6 5 Q. 22 A TYPICAL Rds(oh) = 0.048 Q. AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    PDF TK22N

    7N90FI

    Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
    Text: SELECTION GUIDE - BY VOLTAGE V BR DSS (V ) ^D Sfon) * ? max Id (A) Package Type iD(max) Ptot (A) (W ) (Q ) g ts C iss min Page (S ) max (pF) * 1000 0 .7 7 0 9 .0 IS O T O P TSD 14N 100V 1 4 .0 310 8 .0 7000 1000 0 .7 7 0 9 .0 IS O T O P TSD 17N 100V 1 7 .0


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    PDF TP40N STP45N 05LFI Z11FI TP30N STK22N STP25N 7N90FI 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90

    TSD45N50V

    Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
    Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000


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    PDF STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V