STP30N Search Results

Contextual Info: STP30NE06L STP30NE06LFP N - CHANNEL 60V - 0.035 Q. - 30A - TO 220/T0-220FP STripFET POWER MOSFET TYPE V dss RDS on Id STP30NE06L STP30NE06LFP 60 V 60 V < 0 .0 5 Q. < 0 .0 5 Q. 30 A 17 A . • TYPICAL R D S (on) = 0.035 100% AVALANCHE TESTED . LOW GATE CHARGE

STP30N05

Abstract: STP30N05FI
Contextual Info: STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N05 STP30N05FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

p30ne06

Abstract: STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220
Contextual Info: STP30NE06 STP30NE06FP  N - CHANNEL 60V - 0.045 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P30NE06 ST P30NE06FP 60 V 60 V < 0.055 Ω < 0.055 Ω 30 A 17 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω

STP30NE06L

Abstract: STP30NE06LFP
Contextual Info: STP30NE06L STP30NE06LFP N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP30NE06L STP30NE06LFP 60 V 60 V < 0.05 Ω < 0.05 Ω 30 A 17 A • ■ ■ ■ TYPICAL RDS(on) = 0.035 Ω 100% AVALANCHE TESTED

200V AUTOMOTIVE MOSFET

Abstract: 30NF20 JESD97 STP30NF20 STW30NF20
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■

STP30N05

Abstract: STP30N05FI
Contextual Info: STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N05 STP30N05FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

DD 127 D TRANSISTOR

Abstract: JIS B 0409
Contextual Info: *57 TYPE STP30N06 STP30N06FI • • . ■ ■ . ■ ■ SGS-THOMSON s t p 3 on o6 ilLiCTIIMDe STP30N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V 60 V < 0 .0 5 a < 0 .0 5 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

CT-1004

Abstract: D4808
Contextual Info: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω

Contextual Info: STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.042 Q - 30A - T0-220/T0-220FP _ STripFET POWER MOSFET PRELIM IN A R Y DATA TYPE V dss R D S o n Id STP30N E06 STP30NE06FP 60 V 60 V < 0 .0 5 0 Q < 0 .0 5 0 Q 30 A 17 A . TYPICAL RDS(on) = 0.042 Q

STP30N06

Abstract: STP30N06FI
Contextual Info: STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP30NF10

Abstract: STP30NF10FP STB30NF10
Contextual Info: STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB30NF10 STP30NF10 STP30NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.045 Ω <0.045 Ω <0.045 Ω 35 A

30NF20

Abstract: JESD97 STP30NF20 STW30NF20
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • ■ Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ) s ( ct

Contextual Info: STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.042 £2 - 30A - T0-220/T0-220FP _ STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss RDS on Id STP30NE06 STP30NE06FP 60 V 60 V < 0 .0 5 0 Q. < 0 .0 5 0 Q, 30 A 17 A . TYPICAL Ros(on) = 0.042 Ç1

P30NE0

Abstract: P30NE06 P30NE06l p30ne STP30NE06L STP30NE06LFP ns208 C3017 STripFET
Contextual Info: STP30NE06L STP30NE06LFP  N - CHANNEL 60V - 0.040 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE STP30NE06L STP30NE06LFP • ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.05 Ω < 0.05 Ω 30 A 17 A TYPICAL RDS(on) = 0.045 Ω

F30NM60ND

Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
Contextual Info: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND

STP30N05

Abstract: STP30N05FI
Contextual Info: STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N05 STP30N05FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STW30NM50N

Abstract: 30NM50N STP30NM50N STB30NM50N STF30NM50N STI30NM50N
Contextual Info: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω

STP30NE06

Abstract: STP30NE06FP
Contextual Info: STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.042 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STP30NE06 STP30NE06FP 60 V 60 V < 0.050 Ω < 0.050 Ω 30 A 17 A TYPICAL RDS(on) = 0.042 Ω AVALANCHE RUGGED TECHNOLOGY

30NF20

Abstract: STP30NF20 STW30NF20 JESD97
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ■ 100% avalanche tested

B30NF10

Abstract: p30nf10 P30NF10FP STP30NF10 equivalents mosfet STP30NF10 equivalents P30NF b30nf B30NF10d STB30NF10 STB30NF10T4
Contextual Info: STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB30NF10 100V <0.045Ω 35A STP30NF10 100V <0.045Ω 35A STP30NF10FP 100V <0.045Ω

P30NS15LFP

Abstract: P30NS
Contextual Info: STP30NS15LFP N-channel 150V - 0.085Ω - 10A - TO-220FP MESH OVERLAY II Power MOSFET General features Type VDSS RDS on ID STP30NS15LFP 150V <0.1Ω 10A • Extremely high dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested

Contextual Info: ¿57 SGS-THOMSON ¡m era « STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: ¿57 TYP E STP30N05 S TP30N05FI SGS-THOMSON ¡m era « STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

STP30NM30N

Contextual Info: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance