STP36N Search Results

stp36n06v

Abstract: STP36N06 STP36N06FI 144AA
Contextual Info: STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

marking A36A

Abstract: STP36NF06
Contextual Info: STP36NF06 STP36NF06FP N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP STripFET II POWER MOSFET TYPE STP36NF06 STP36NF06FP • ■ ■ ■ VDSS RDS on ID 60 V 60 V <0.040 Ω <0.040 Ω 30 A 18 A(*) TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY

STP36NE06

Abstract: p36ne06fp P36NE06 p36ne06f p36ne morocco p36ne06fp 14A144 IDO24 p36ne0 STripFET
Contextual Info: STP36NE06 STP36NE06FP  N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID ST P36NE06 ST P36NE06FP 60 V 60 V < 0.040 Ω < 0.040 Ω 36 A 20 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY

Contextual Info: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

p36nf06

Contextual Info: STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06 60V <0.040Ω 30A STP36NF06FP 60V <0.040Ω 18A(1) 1. Current limited by package 3 3 1 • Exceptional dv/dt capability

UA36A

Abstract: C3621 STP36N05L STP36N05LFI
Contextual Info: STP36N05L STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■

STP36N05L

Abstract: STP36N05LFI STP36N06L STP36N06LFI UA36A airbag
Contextual Info: STP36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP36NF03L

Contextual Info: STP36NF03L N-CHANNEL 30V - 0.015 Ω - 40A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET PRELIMINARY DATA TYPE STP36NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.02Ω 36 A TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

Contextual Info: STP36NE06 STP36NE06FP N - CHANNEL 60V - 0.032Î2 - 36A - T0-220/T0-220FP STripFET POWER MOSFET TYP E V dss RDS on Id STP36NE06 STP36NE06FP 60 V 60 V < 0 .0 4 0 Q. < 0 .0 4 0 Q. 36 A 20 A . TYPICAL Ros(on) =0.032 £2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED

STP36NF06L

Abstract: STB36NF06L mosfet morocco
Contextual Info: STB36NF06L STP36NF06L N-CHANNEL 60V - 0.032 Ω - 30A D²PAK/TO-220 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STB36NF06L STP36NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V 60 V < 0.040 Ω < 0.040 Ω 30 A 30 A TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY

30A18

Abstract: STP36NF06 STP36NF06FP TO-220TP
Contextual Info: STP36NF06 STP36NF06FP N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP STripFET II POWER MOSFET PRELIMINARY DATA TYPE STP36NF06 STP36NF06FP • ■ ■ ■ VDSS RDS on ID 60 V 60 V <0.040 Ω <0.040 Ω 30 A 18 A(*) TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY

transistor tc 144

Contextual Info: ¿57 TYP E STP36N06 S TP36N06FI S G S -T H O M S O N ¡U È T O « S T P 36 N06 S T P 3 6 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY

p36nf06

Abstract: avalanche diode 30A
Contextual Info: STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06 60V <0.040Ω 30A STP36NF06FP 60V <0.040Ω 18A(1) 1. Current limited by package 3 3 1 • Exceptional dv/dt capability

P36NF06L

Abstract: p36nf06 STP36NF06L STB36NF06L B36NF06 JESD97 13-Mar-2006
Contextual Info: STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■

STP36N05L

Abstract: STP36N05LFI
Contextual Info: STP36N05L STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06 60V <0.040Ω 30A STP36NF06FP 60V <0.040Ω 18A(1) 1. Current limited by package 1 • Exceptional dv/dt capability

TP36N

Abstract: DIODE RK 306
Contextual Info: STP36NE06 STP36NE06FP N - CHANNEL 60V - 0.032Î2 - 36A - T0-220/T0-220FP STripFET POWER MOSFET TYPE V STP36N E06 STP36NE06FP dss 60 V 60 V R D S o n Id < 0.040 Q. < 0.040 Q, 36 A 20 A . TYPICAL RDs(on) = 0.032 C2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED

14A144

Abstract: STP36N05L STP36N05LFI
Contextual Info: STP36N05L STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP36N06

Abstract: STP36N06FI
Contextual Info: STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP36N06

Abstract: STP36N06FI airbag C3621
Contextual Info: STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

36N55M5

Abstract: STW36N55M5 36N55
Contextual Info: STP36N55M5 STW36N55M5 N-channel 550 V, 0.06 Ω, 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages Datasheet — preliminary data Features Order code STP36N55M5 STW36N55M5 • VDSS @ TJmax RDS on max ID 600 V < 0.08 Ω 33 A TAB 3 Worldwide best RDS(on) * area

STP36NF03L

Abstract: STP36N
Contextual Info: STP36NF03L N-CHANNEL 30V - 0.015 Ω - 40A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET PRELIMINARY DATA TYPE STP36NF03L VDSS RDS on ID 30 V <0.02Ω 36 A TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

STP36NF03L

Contextual Info: STP36NF03L  N-CHANNEL 30V - 0.015 Ω - 36A TO-220 LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA T YPE STP36NF03L • ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.02 Ω 36 A TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF