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STP4407 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
STP4407 Abstract: mosfet 407 mosfet vgs 5v Contextual Info: 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	STP4407 STP4407 -30V/-12A, -30V/-10A, mosfet 407 mosfet vgs 5v	PDF
Contextual Info: STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	STP4407 STP4407 -30V/-10A, -30V/-6	PDF

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STP4407

Abstract: mosfet 407 mosfet vgs 5v
Contextual Info: 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Original

STP4407 STP4407 -30V/-12A, -30V/-10A, mosfet 407 mosfet vgs 5v

PDF

Contextual Info: STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Original

STP4407 STP4407 -30V/-10A, -30V/-6

PDF