STRH12P10 Search Results

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STMicroelectronics STRH12P10GYG Rad-Hard Power MOSFET P-Channel 100V 12A 265mOhm Gold 3-Pin TO-257AA Through Hole Strip Pack - Bulk (Alt: STRH12P10GYG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STRH12P10GYG	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STRH12P10GY1 Trans P-CH 100V 12A 3-Pin TO-257AA Carrier T/R - Bulk (Alt: STRH12P10GY1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STRH12P10GY1	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STRH12P10GY1			17 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

STRH12P10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	PDF	STRH12P10ESY3 O-257AA 100kRad 34Mev/cm O-257AA
STRH12P10ESY1 Abstract: STRH12P10ESY3 Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight	Original	PDF	STRH12P10ESY3 O-257AA 100kRad 34Mev/cm STRH12P10ESY1 STRH12P10ESY3
Untitled Abstract: No abstract text available Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA	Original	PDF	STRH12P10 O-257AA DocID022337
STRH12P10GYG Abstract: No abstract text available Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications	Original	PDF	STRH12P10 O-257AA DocID022337 STRH12P10GYG
JESD97 Abstract: STRH12P10ESY1 STRH12P10ESY3 MG 5248 Text: STRH12P10ESY1 STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH12P10ESY1 100 V STRH12P10ESY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	PDF	STRH12P10ESY1 STRH12P10ESY3 O-257AA 34Mev/cm JESD97 STRH12P10ESY1 STRH12P10ESY3 MG 5248
Untitled Abstract: No abstract text available Text: STRH12P10 Rad-Hard P-channel 100 V, 12 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 12 A TBD TBD • Fast switching ■ 100% avalanche tested 1 ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 2 3 TO-257AA Applications ■ Satellite ■	Original	PDF	STRH12P10 O-257AA SC06140p STRH12P10GY1 O-257AA