SI4430 Search Results

SI4430B

Abstract: si4430bd
Contextual Info: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

Contextual Info: AN440 Si4430/31/32 R EGISTER D ESCRIPTIONS 1. Complete Register Summary Table 1. Register Descriptions Add R/W Function/Desc D7 D6 D5 Data D4 D3 D2 D1 D0 POR Default 00 R Device Type dt[4] dt[3] dt[2] dt[1] dt[0] 08h 01 R Device Version vc[4] vc[3] vc[2] vc[1]

Si4430BDY

Abstract: Si4430BDY-T1-E3 Si4430BDY-T1-GE3
Contextual Info: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

Si4430DY

Contextual Info: SPICE Device Model Si4430DY N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

SI4430BDY-E3

Abstract: S3550 SI4430BDY-T1-E3 Si4430BDY
Contextual Info: Si4430BDY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.006 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFETS D 100% Rg Tested Qg (Typ) 24 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D

SI4430BDY

Abstract: 80 diode Si4430DY Si4430BDY-T1-E3 Si4430DY-T1 Si4430DY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4430BDY vs. Si4430DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4430BDY-T1-E3 Replaces Si4430DY-T1-E3 Si4430BDY-T1-E3 Replaces Si4430DY-T1 Summary of Performance:

Si4430BDY

Abstract: A18280
Contextual Info: SPICE Device Model Si4430BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4430BDY

Abstract: Si4430BDY-T1-GE3 Si4430BDY-T1-E3
Contextual Info: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

Si4430DY

Contextual Info: SPICE Device Model Si4430DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4730

Abstract: AN461 Si4430 Si4432B AN453 diode GP2 354 SI4432-B1-FM si4432-b1 RF toy plane circuit diagram SI4430B
Contextual Info: Si4430/31/32-B1 Si4430/31/32 ISM T RANSCEIVER Features Applications Silicon Laboratories’ Si4430/31/32 devices are highly integrated, single chip wireless ISM transceivers. The high-performance EZRadioPRO family includes a complete line of transmitters, receivers, and transceivers allowing the RF

Si4430DY

Contextual Info: SPICE Device Model Si4430DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

si4430dy

Contextual Info: Si4430DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4430DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4430BDY

Abstract: A18280
Contextual Info: SPICE Device Model Si4430BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT 24 SO-8 D S 1 8

Si4432B

Abstract: fsk modem 9400 ant-div switch RX 3152 8 pin integrated circuit frequency hopping spread spectrum 900 SI4430
Contextual Info: Si4430/31/32-B1 Si4430/31/32 ISM T RANSCEIVER Features Silicon Laboratories’ Si4430/31/32 devices are highly integrated, single chip wireless ISM transceivers. The high-performance EZRadioPRO family includes a complete line of transmitters, receivers, and transceivers allowing the RF

Si4430DY

Contextual Info: Si4430DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

74094

Abstract: a 6151 A 7710 AN609 Si4430BDY
Contextual Info: Si4430BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN440

Abstract: Si4432 CRC-16 37H7D si443 crga ichip
Contextual Info: AN440 Si4430/31/32 R EGISTER D ESCRIPTIONS 1. Complete Register Summary Table 1. Register Descriptions Add R/W Function/Desc D7 D6 D5 Data D4 D3 D2 D1 D0 POR Default 00 R Device Type dt[4] dt[3] dt[2] dt[1] dt[0] 00111 01 R Device Version vc[4] vc[3] vc[2]

Contextual Info: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

AN609

Abstract: Si4430DY
Contextual Info: Si4430DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4430DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

si4430

Abstract: Siward crystal xtal OSC CMOS 32.768K
Contextual Info: Si4430 Si4430 ISM T RANSCEIVER Features           Frequency Range = 900–960 MHz Sensitivity = –118 dBm +13 dBm Max Output Power Configurable –8 to +13 dBm Low Power Consumption 18.5 mA receive 28 mA @ +13 dBm transmit