SI4431 Search Results

SI4431CDY

Contextual Info: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4431BDY-T1

Abstract: Si4431BDY Si4431BDY-T1-E3 si4431b
Contextual Info: Si4431BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • TrenchFET Power MOSFETs Pb-free - 30 Available RoHS* COMPLIANT SO-8 S 1 8

SI4431DY

Contextual Info: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Contextual Info: Tem ic Si4431DY Semiconductors P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) r DS(on) (£2) 30 Id (A) 0.040 @VGs = -10 V ±5.8 0.070 @ VGs = -4.5 V ±4.5 s s s SO-8 D D D D P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)

A1818

Abstract: SI4431BDY-T1-E3
Contextual Info: Si4431BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • TrenchFET Power MOSFETs Pb-free - 30 Available RoHS* COMPLIANT SO-8 S 1 8

Si4431CDY

Abstract: Si4431CDY-T1-E3
Contextual Info: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4431BDY

Contextual Info: Si4431BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = -10 V -7.5 0.050 @ VGS = -4.5 V -5.8 -30 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4431BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs SO-8

Si4431DY

Contextual Info: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

NON polarized capacitor 1uf

Abstract: si4431 crc error Siward crystal xtal SI4431 WD-1 ATB40
Contextual Info: Si4431 Si4431 ISM T RANSCEIVER Features           Frequency Range = 240–930 MHz Sensitivity = –118 dBm +13 dBm Max Output Power Configurable –8 to +13 dBm Low Power Consumption 18.5 mA receive 28 mA @ +13 dBm transmit

Si4431BDY-T1-E3

Abstract: Si4431BDY Si4431BDY-T1-GE3
Contextual Info: Si4431BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs SO-8

4431 SOIC-8

Abstract: 4431 mosfet 4431 soic8 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z Si4431DY
Contextual Info: Si4431DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain

99420

Contextual Info: Si4431ADY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "7.0 0.055 @ VGS = –4.5 V "5.0 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

71803

Abstract: Si4431ADY
Contextual Info: Si4431ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = - 10 V - 7.2 0.052 @ VGS = - 4.5 V - 5.5 D TrenchFETr Power MOSFET - 30 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET

4066 spice model

Abstract: 7809 A m 1104 N 5192 AN609 Si4431CDY
Contextual Info: Si4431CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: Si4431ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V –7.2 0.052 @ VGS = –4.5 V –5.5 D TrenchFETr Power MOSFET –30 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4431ADY-T1

Contextual Info: Si4431ADY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "7.0 0.055 @ VGS = –4.5 V "5.0 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4431CDY

Abstract: Si4431CDY-T1-E3 SI4431CDY-T1-GE3 si4431c
Contextual Info: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4431DY

Abstract: 3V02
Contextual Info: Si4431DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.040 @ VGS = -10 V "5.8 0.070 @ VGS = -4.5 V "4.5 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si4431ADY

Contextual Info: Si4431ADY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "7.0 0.055 @ VGS = –4.5 V "5.0 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4431BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs SO-8

4431 mosfet

Abstract: 4431 fairchild Si4431DY
Contextual Info: Si4431DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain

Si4431ADY

Contextual Info: Si4431ADY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "7.0 0.055 @ VGS = –4.5 V "5.0 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4431BDY

Abstract: Si4431BDY-T1-E3 Si4431BDY-T1-GE3
Contextual Info: Si4431BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs SO-8