SI4455 Search Results

bifa antenna

Abstract: 868 printed antenna design HTA 200-S Si446x/Si4362
Contextual Info: AN686 A NTENNAS FOR THE S i4 4 5 5 /4 3 5 X RF IC S 1. Introduction This application note provides guidelines and design examples to help users design antennas for the next generation EZRadio RF ICs. The matching principles for the Si4455 are described in detail in “AN693: Si4455

SI4455DY-T1-GE3

Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V - 8.6c • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: AN800 S i 4 4 5 5 A N D A R I B S T D - T 1 0 8 C O M P L I A N C E AT 9 2 0 M H Z 1. Introduction This document demonstrates the compliance of the Si4455 RFIC with the regulatory requirements of ARIB STDT108 in the 920 MHz band. The measurements within this document were taken with an Si4455-B1 RFIC mounted

Contextual Info: Si4455 E ASY - TO - U SE , L O W - C URRENT OOK/ G FSK S UB -GH Z T RANSCEIVER Features  mA RX mA TX @ +10 dBm Low standby current = 50 nA    Pin Assignments Applications     Remote control Home security and alarm  Telemetry  Garage and gate openers

si4455dy

Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V 8.6c - • TrenchFET Power MOSFET • 100% Rg Tested • 100% UIS Tested Qg (Typ.)

SI4455

Abstract: AN609
Contextual Info: Si4455DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

SI4455

Abstract: si4455dy
Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V - 8.6c • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI4455

Abstract: Si4455DY
Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V 8.6c - • TrenchFET Power MOSFET • 100% Rg Tested • 100% UIS Tested Qg (Typ.)

Si4355/Si4455

Abstract: 74LVC1G3157GW
Contextual Info: EZRadio-DK R a n g e Te s t D e m o EZR ADIO S i 4 4 5 5 TW O - W AY AND Si4012/Si4355 O NE - W AY L INK D EVELOPMENT K I T U SER ’ S G U I D E 1. Overview Thank you for your interest in Silicon Labs’ EZRadio® product family. The Silicon Labs EZRadio Si4455 Two-Way

bifa antenna

Abstract: AN685
Contextual Info: AN685 L AYOUT D E S I G N G U I D E FOR THE Si4 4 5 5 /4 3 5 X RF IC S 1. Introduction This application note provides guidelines and design examples to help users design PCBs for the next generation EZRadio RF ICs, such as the Si4455/435x devices, using good design practices that allow for high quality RF

SI4455

Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V - 8.6c • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6 V 8.6c - Qg (Typ.) • 100% Rg and UIS Tested • Material categorization:

Si4455DY

Abstract: SI4455
Contextual Info: SPICE Device Model Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4455

Abstract: AN-686 Si4455-B1A-FM freq_xo cts 219
Contextual Info: Si4455 E ASY - TO - U SE , L O W - C URRENT OOK/ G FSK S UB -GH Z T RANSCEIVER Features  mA RX mA TX @ +10 dBm Low standby current = 50 nA    Pin Assignments Applications     Remote control Home security and alarm  Telemetry  Garage and gate openers

AN691

Abstract: Si4355/Si4455
Contextual Info: AN691 EZR ADIO API G UIDE 1. Introduction This document provides API descriptions for the commands and properties used to control and configure the Si4455 and Si4355. 2. API Summary 2.1. Command Summary Boot Commands Number Name 0x02 POWER_UP Summary Power-up device and mode selection. Modes include operational function

Contextual Info: SPICE Device Model Si4455DY www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

C80C51F930

Abstract: 74LVC1G3157GW
Contextual Info: S i 4 4 5 5 - 2 Wa y L i n k - D E M O S i4455 E Z R ADIO TWO - W AY L INK D EMO K IT U SER ’ S G U ID E 1. Kit Overview This user's guide describes Silicon Labs' Si4455 EZRadio® Two-Way Link demo kit. The kit contains two RF nodes based on the RFStick board to support evaluation and development of sub-GHz RF links with the Si4455 EZRadio

Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V - 8.6c • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

tx rx module 434 4 channel

Abstract: SI4455 remote control rx tx Si4455-B1A-FM 20pin QFN 3x3 868 MHz transceiver spi SDN12
Contextual Info: Si4455 EASY-TO-USE, LOW-CURRENT OOK/ G FSK SUB-GHZ TRANSCEIVER Description Silicon Laboratories’ Si4455 is an easy-to-use, low current, sub-GHz EZRadio transceiver. Covering all major bands, it combines plug-and-play simplicity with the flexibility needed to handle a wide variety of applications. The

Si4355/Si4455

Contextual Info: AN655 R ANGE TE S T A P P LICATIO N FOR E Z R ADIO AND E Z R ADIO PRO ® 1. Introduction The range evaluation demo provides an easy way to evaluate the link budget of EZRadio® and EZRadioPRO® devices by performing a range test between two nodes. The range test demo implements Packet Error Rate PER

Contextual Info: AN633 PROGRAMMING GUIDE FOR E Z R A D IO P R O S i 4 X 6 X D E V I C E S 1. Introduction This document is intended to serve as a guide for application development with EZRadioPRO® radio ICs. It introduces the major parts of the hardware platform, such as the RF Pico board, which contains the radio and the

AN691

Contextual Info: AN747 Si4313 T O Si4355 T RANSITION D OCUMENT 1. Introduction This document provides comparison and transition assistance from the Si4313 to the Si4355 EZRadio receiver. The Si4355 represents a new generation of the EZRadio family with improved performance and flexibility combined

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

ARDUINO UNO REV3 - RETAIL

Abstract: BCM43362 Futaba 5 lt 51 Mediatek Gps Mt3329 T010010 Arduino Mega2560 XBee-PRO s1 PIC24F16ka102 Free Projects futaba transmitter parallax servo controller
Contextual Info: EMBEDDED SOLUTIONS Wireless Solutions Anaren . . . . . . . . . . . . . . . . . . . . . . . . . . 5, 6 Antenova . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Atmel . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Bluegiga . . . . . . . . . . . . . . . . . . . . . . . . . . . 8