Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI4953DY Search Results

    SF Impression Pixel

    SI4953DY Price and Stock

    Rochester Electronics LLC SI4953DY

    MOSFET 2P-CH 30V 4.9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4953DY Bulk 437
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.69
    • 10000 $0.69
    		Buy Now

    Vishay Intertechnologies SI4953DY-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4953DY-T1 2,771
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Fairchild Semiconductor Corporation SI4953DY

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4953DY 2,573
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Rochester Electronics SI4953DY 2,500 1
    • 1 $0.6608
    • 10 $0.6608
    • 100 $0.6212
    • 1000 $0.5617
    • 10000 $0.5617
    		Buy Now

    Vishay Siliconix SI4953DY-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4953DY-T1 1,680
    • 1 $3.39
    • 10 $3.39
    • 100 $3.39
    • 1000 $1.8645
    • 10000 $1.695
    		Buy Now
    Velocity Electronics SI4953DY-T1 41
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Siliconix SI4953DY

    0.053 ohm, 2 CHANNEL, Si, POWER, FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4953DY 371
    • 1 $2.212
    • 10 $2.212
    • 100 $1.106
    • 1000 $0.8848
    • 10000 $0.8848
    		Buy Now
    SI4953DY 144
    • 1 $2
    • 10 $2
    • 100 $1
    • 1000 $1
    • 10000 $1
    		Buy Now
    Find more SI4953DY price and stock on Findchips.com

    SI4953DY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4953DY Fairchild Semiconductor Dual P-Channel Enhancement Mode MOSFET Original PDF
    SI4953DY Fairchild Semiconductor Dual P-Channel Enhancement Mode MOSFET Original PDF
    Si4953DY Fairchild Semiconductor Dual P-Channel Enhancement Mode MOSFET Original PDF
    Si4953DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4953DY Vishay Telefunken Dual P-channel 30-v(d-s) Mosfet Original PDF
    SI4953DY_NL Fairchild Semiconductor Dual P-Channel Logic Level PowerTrench MOSFET Original PDF
    Si4953DY-T1 Vishay Siliconix Dual P-Channel 30-V(D-S) MOSFET Original PDF

    SI4953DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		PDF Si4953DY

    Si64

    Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Si9947DY

    Abstract: Si4947DY Si4953DY Si6955DQ si6955
    Text: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ


    Original     		PDF Si9947DY Si4947DY Si4953DY Si6955DQ S-47958--Rev. 15-Apr-96 si6955

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4953DY

    Abstract: No abstract text available
    Text: Si4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4953DY S-47958--Rev. 15-Apr-96

    Si9430DY

    Abstract: Si4435DY Si4953DY Si6435DQ
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    S-49534

    Abstract: Si4953DY
    Text: Si4953DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4953DY S-49534--Rev. 06-Oct-97 S-49534

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 70513 51361

    Si4953DY

    Abstract: No abstract text available
    Text: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		PDF Si4953DY

    Si4953DY

    Abstract: No abstract text available
    Text: Si4953DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.053 @ VGS = -10 V "4.9 0.095 @ VGS = -4.5 V "3.6 S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 PĆChannel MOSFET D2 D2 PĆChannel MOSFET


    Original     		PDF Si4953DY S42234Rev.

    SI9947DY

    Abstract: Si4947DY Si4953DY Si6955DQ
    Text: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ


    Original     		PDF Si9947DY Si4947DY Si4953DY Si6955DQ S-47958--Rev. 15-Apr-96

    Si9430DY

    Abstract: Si4435DY Si4953DY Si6435DQ SI9430DY equivalent
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96 SI9430DY equivalent

    Si4953DY

    Abstract: Si4953DY-T1
    Text: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D 100% Rg Tested rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V - 4.9 0.095 @ VGS = - 4.5 V - 3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1


    Original     		PDF Si4953DY Si4953DY-T1 08-Apr-05

    Si4953DY

    Abstract: Si4953DY-T1
    Text: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D 100% Rg Tested rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V - 4.9 0.095 @ VGS = - 4.5 V - 3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1


    Original     		PDF Si4953DY Si4953DY-T1 18-Jul-08

    74226

    Abstract: RG154 Si4953DY Si4953ADY Si4953ADY-T1-E3 Si4953DY-T1 Si4953DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4953ADY vs. Si4953DY Description: Package: Pin Out: Dual P-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements Si4953ADY-T1-E3 Replaces Si4953DY-T1-E3 Si4953ADY-T1-E3 Replaces Si4953DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4953ADY Si4953DY Si4953ADY-T1-E3 Si4953DY-T1-E3 Si4953DY-T1 06-Nov-06 74226 RG154

    Untitled

    Abstract: No abstract text available
    Text: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V "4.9 0.095 @ VGS = - 4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4953DY S-49534--Rev. 06-Oct-97

    Untitled

    Abstract: No abstract text available
    Text: Si4953DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4953DY S-49534--Rev. 06-Oct-97

    Top side marking AHQ

    Abstract: Si4953DY
    Text: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		PDF Si4953DY Top side marking AHQ

    Si4953DY

    Abstract: Si4953DY-T1
    Text: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D 100% Rg Tested rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V - 4.9 0.095 @ VGS = - 4.5 V - 3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1


    Original     		PDF Si4953DY Si4953DY-T1 S-31726--Rev. 18-Aug-03

    Si4953DY

    Abstract: TNR SG
    Text: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		PDF Si4953DY TNR SG

    Untitled

    Abstract: No abstract text available
    Text: Temic Si4953DY Semiconductors Dual P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) 30 r DS(on) (£2) I d (A) 0.053 @ VGs = -10 V ±4.9 0.095 @ VGs = -4.5 V ±3.6 s2 9 Si o SO-8 6 Di 6 Di P-Channel MOSFET 6 6 d2 d2 P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF Si4953DY S-49534â 06-Oct-97 DD17flflT