SI5433DC Search Results

Si5433BDC-T1-E3

Abstract: MOSFET "CURRENT source" Si5433DC Si5433DC-T1 Si5433BDC SI5433DC-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si5433BDC vs. Si5433DC Description: P-Channel, 20 V D-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5433BDC-T1-E3 Replaces Si5433DC-T1-E3 Si5433BDC-T1 Replaces Si5433DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si5433DC

Abstract: Si5433DC-T1
Contextual Info: Si5433DC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.040 @ VGS = -4.5 V -6.7 0.052 @ VGS = -2.5 V -5.9 0.072 @ VGS = -1.8 V -5.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BD XX Lot Traceability

Si5433DC

Contextual Info: SPICE Device Model Si5433DC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5433DC

Abstract: Si5433DC-T1
Contextual Info: Si5433DC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.040 @ VGS = -4.5 V -6.7 0.052 @ VGS = -2.5 V -5.9 0.072 @ VGS = -1.8 V -5.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BD XX Lot Traceability

Si5433DC

Abstract: marking code BD
Contextual Info: Si5433DC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V –6.7 0.052 @ VGS = –2.5 V –5.9 0.072 @ VGS = –1.8 V –5.0 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code

Contextual Info: Si5433DC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.040 @ VGS = -4.5 V -6.7 0.052 @ VGS = -2.5 V -5.9 0.072 @ VGS = -1.8 V -5.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BD XX Lot Traceability

Si5433DC

Contextual Info: SPICE Device Model Si5433DC P-Channel 20-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated