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    SI5441BDC Price and Stock

    Vishay Siliconix SI5441BDC-T1-E3

    MOSFET P-CH 20V 4.4A 1206-8
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    DigiKey SI5441BDC-T1-E3 Reel 3,000
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    SI5441BDC-T1-E3 Cut Tape 1
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    SI5441BDC-T1-E3 Digi-Reel 1
    • 1 $1.72
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    RS SI5441BDC-T1-E3 Bulk 3,000
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    Vishay Siliconix SI5441BDC-T1-GE3

    MOSFET P-CH 20V 4.4A 1206-8
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    DigiKey SI5441BDC-T1-GE3 Reel 3,000
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    SI5441BDC-T1-GE3 Digi-Reel 1
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    SI5441BDC-T1-GE3 Cut Tape 1
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    Vishay Intertechnologies SI5441BDC-T1-GE3

    P Channel Mosfet, -20V, 61A, 1206; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:8V; Gate Source Threshold Voltage Max:12V Rohs Compliant: Yes |Vishay SI5441BDC-T1-GE3
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    Newark SI5441BDC-T1-GE3 Cut Tape 3,000
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    Vishay Intertechnologies SI5441BDC-T1-E3

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    Bristol Electronics SI5441BDC-T1-E3 229
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    Quest Components SI5441BDC-T1-E3 2,343
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    SI5441BDC-T1-E3 183
    • 1 $1.35
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    Others SI5441BDC-T1-E3

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    Chip 1 Exchange SI5441BDC-T1-E3 13
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    SI5441BDC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5441BDC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.4A 1206-8 Original PDF
    SI5441BDC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.4A 1206-8 Original PDF

    SI5441BDC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74055

    Abstract: transistor 74055 Si5441DC Si5441DC-T1 Si5441DC-T1-E3
    Text: Specification Comparison Vishay Siliconix Si5441BDC vs. Si5441DC Description: P-Channel, 2.5 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5441BDC-T1-E3 Replaces Si5441DC-T1-E3 Si5441BDC-T1 Replaces Si5441DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si5441BDC Si5441DC Si5441BDC-T1-E3 Si5441DC-T1-E3 Si5441BDC-T1 Si5441DC-T1 09-Nov-06 74055 transistor 74055

    1206-8

    Abstract: No abstract text available
    Text: Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −6.1 0.052 @ VGS = −3.6 V −5.7 0.080 @ VGS = −2.5 V −4.6 D TrenchFETr Power MOSFET Qg (Typ) 11.5


    Original     		PDF Si5441BDC Si5441BDC-T1--E3 08-Apr-05 1206-8

    W 1.4852

    Abstract: 9952 9962 mosfet AN609
    Text: Si5441BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5441BDC AN609 12-Jun-07 W 1.4852 9952 9962 mosfet

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −6.1 0.052 @ VGS = −3.6 V −5.7 0.080 @ VGS = −2.5 V −4.6 D TrenchFETr Power MOSFET Qg (Typ) 11.5


    Original     		PDF Si5441BDC Si5441BDC-T1--E3 S-42240--Rev. 13-Dec-04

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −6.1 0.052 @ VGS = −3.6 V −5.7 0.080 @ VGS = −2.5 V −4.6 D TrenchFETr Power MOSFET Qg (Typ) 11.5


    Original     		PDF Si5441BDC Si5441BDC-T1--E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 11-Mar-11

    BY 79

    Abstract: No abstract text available
    Text: SPICE Device Model Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5441BDC 18-Jul-08 BY 79

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5441BDC S-52525Rev. 12-Dec-05

    Si5441BDC-T1-GE3

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5441BDC-T1-GE3

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 18-Jul-08

    3.7v battery charger circuit diagram

    Abstract: usb plug BSS84 LX2205 LX2205ILQ NTHS0402N01N1003J 3.7V Li-Ion battery charge controller usb 5v 1a charger tm1a
    Text: LX2205 TM 1A Li-Ion Battery Charger with Power Source Management P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION two logically selectable levels 100mA and 500mA . When powered by a USB input, the battery is charged with the excess USB current that is not


    Original     		PDF LX2205 100mA 500mA) 155mm( 3.7v battery charger circuit diagram usb plug BSS84 LX2205 LX2205ILQ NTHS0402N01N1003J 3.7V Li-Ion battery charge controller usb 5v 1a charger tm1a

    SMD resistors 1806

    Abstract: SMD zener diode 202 1N4148WS
    Text: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5


    Original     		PDF HPC0201A HPC0402A HPC0402B/C HPC0603A SMD resistors 1806 SMD zener diode 202 1N4148WS

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    Untitled

    Abstract: No abstract text available
    Text: LX2205 TM 1A Li-Ion Battery Charger with Power Source Management P RODUCTION D ATA S HEET two logically selectable levels 100mA and 500mA . When powered by a USB input, the battery is charged with the excess USB current that is not consumed by the system load. If the


    Original     		PDF LX2205 100mA 500mA) 155mm(

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    AN819

    Abstract: SI4686 Si4800BDY Si4336DY Si4686DY Si4894BDY Si5404BDC Si7112DN Si7336ADP Si7806ADN
    Text: VISHAY SILICONIX Power MOSFETs Application Note 834 Estimating Junction Temperature by Top Surface Temperature in Power MOSFETs By Satoru Sawahata Abstract The thermal data provided on MOSFET datasheets is usually limited to thermal impedance between junction-to-lead and junction-to-ambient. While Vishay


    Original     		PDF AN819, 29-Feb-08 AN819 SI4686 Si4800BDY Si4336DY Si4686DY Si4894BDY Si5404BDC Si7112DN Si7336ADP Si7806ADN