SI7302DN Search Results
SI7302DN Price and Stock
Vishay Siliconix SI7302DN-T1-E3MOSFET N-CH 220V 8.4A PPAK1212-8 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI7302DN-T1-E3 | Reel |
|
Buy Now | |||||||
Vishay Siliconix SI7302DN-T1-GE3MOSFET N-CH 220V 8.4A PPAK1212-8 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI7302DN-T1-GE3 | Reel | 3,000 |
|
Buy Now |
SI7302DN Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|---|
Si7302DN-T1-E3 |
![]() |
Transistor Mosfet N-CH 220V 2.3A 8POWERPAK | Original | 109.91KB | 7 | |||
SI7302DN-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 220V 8.4A 1212-8 | Original | 13 | ||||
SI7302DN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 220V 8.4A 1212-8 | Original | 13 |
SI7302DN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Si7302DNContextual Info: SPICE Device Model Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si7302DN 18-Jul-08 | |
Contextual Info: Si7302DN New Product Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.320 @ VGS = 10 V 8.4 0.340 @ VGS = 6 V 8.2 VDS (V) 220 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 9 1 nC 9.1 Product Is |
Original |
Si7302DN Si7302DN-T1--E3 S-50280--Rev. 21-Feb-05 | |
Si7302DN
Abstract: S-51128-Rev SI7302DN-T1-E3
|
Original |
Si7302DN Si7302DN-T1--E3 S-51128--Rev. 13-Jun-05 S-51128-Rev SI7302DN-T1-E3 | |
Contextual Info: Si7302DN Vishay Siliconix New Product N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS 9.1 nC APPLICATIONS COMPLIANT |
Original |
Si7302DN Si7302DN-T1-E3 18-Jul-08 | |
Si7302DNContextual Info: Si7302DN New Product Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.320 @ VGS = 10 V 8.4 0.340 @ VGS = 6 V 8.2 VDS (V) 220 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 9 1 nC 9.1 RoHS COMPLIANT |
Original |
Si7302DN Si7302DN-T1--E3 08-Apr-05 | |
Contextual Info: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21 |
Original |
Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si7302DN
Abstract: Si7302DN-T1-E3
|
Original |
Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 18-Jul-08 | |
Contextual Info: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21 |
Original |
Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si7302DN Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21 |
Original |
Si7302DN Si7302DN-T1-E3 Si7302DN-T1-GE3 11-Mar-11 | |
Contextual Info: Si7302DN Vishay Siliconix New Product N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS 9.1 nC APPLICATIONS COMPLIANT |
Original |
Si7302DN Si7302DN-T1-E3 08-Apr-05 | |
q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
|
Original |
SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS | |
LTC3758
Abstract: LT3578 MMBT3908 LT1480 IHLP2525CZER1ROM 50V 20A step down regulator PA2925NL AN126 100CE10FS AN125
|
Original |
AN125 IntLT4180 AN126 an126f AN126-21 AN126-22 LTC3758 LT3578 MMBT3908 LT1480 IHLP2525CZER1ROM 50V 20A step down regulator PA2925NL 100CE10FS |