SI9936DY Search Results
SI9936DY Price and Stock
onsemi SI9936DYMOSFET 2N-CH 30V 5A 8SOIC |
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SI9936DY | Reel | 2,500 |
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SI9936DY | Reel | 111 Weeks | 2,500 |
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NXP Semiconductors SI9936DY,518MOSFET 2N-CH 30V 5A 8SO |
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SI9936DY,518 | Reel |
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Vishay Siliconix SI9936DY-T1 |
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SI9936DY-T1 | 1,633 |
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SI9936DY-T1 | 83,905 |
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Vishay Siliconix SI9936DY |
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SI9936DY | 176 |
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SI9936DY | 818 |
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SI9936DY | 2,299 |
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Fairchild Semiconductor Corporation SI9936DY5 A, 30 V, 0.05 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET |
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SI9936DY | 4,906 |
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SI9936DY | 2,230 |
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SI9936DY Datasheets (11)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI9936DY |
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Dual N-Channel Enhancement Mode MOSFET | Original | |||
Si9936DY |
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N-Channel Enhancement Mode Field-Effect Transistor | Original | |||
SI9936DY |
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N-channel enhancement mode field-effect transistor | Original | |||
SI9936DY | Siliconix | Dual N-Channel Enhancement-Mode MOSFET | Original | |||
Si9936DY |
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Power MOSFETs Cross Reference Guide | Original | |||
SI9936DY | General Semiconductor | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Dual, Pkg Style SO-8 | Scan | |||
SI9936DY,518 |
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FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5A SOT96-1 | Original | |||
SI9936DY-DS | Vishay Telefunken | DS-Spice Model for Si9936DY | Original | |||
SI9936DY_NL |
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Dual N-Channel Enhancemnt Mode MOSFET | Original | |||
Si9936DY SPICE Device Model |
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Dual N-Channel 30-V (D-S) MOSFET | Original | |||
SI9936DY-T1 | Vishay Intertechnology | Dual N-Channel 30-V (D-S) MOSFET | Original |
SI9936DY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si9936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching |
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Si9936DY | |
Contextual Info: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching |
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Si9936DY | |
Si4936DY
Abstract: Si6954DQ Si9936DY
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Si9936DY Si4936DY Si6954DQ 51310--Rev. 18-Dec-96 | |
Si9936DYContextual Info: SPICE Device Model Si9936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si9936DY 05-Nov-99 | |
Si9936DY
Abstract: Si4936DY Si6954DQ
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Si9936DY Si4936DY Si6954DQ 51310--Rev. 18-Dec-96 | |
Si9936DYContextual Info: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching |
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Si9936DY | |
Si4936DY
Abstract: Si6956DQ Si9936DY Si9956DY
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Si9956DY Si4936DY Si9936DY Si6956DQ S-47958--Rev. 15-Apr-96 | |
si6956
Abstract: SI6956DQ
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OCR Scan |
9956DY Si4936DY Si9936DY Si6956DQ 18-Dec-96 S-51302-- si6956 | |
Contextual Info: Temic siiictinix_ SÌ9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDs V «DS(on) (Q ) 20 Id (A) 0.10 @ VGS = 10 V ±3.5 0.20 @ VGS = 4.5 V ±2.0 Recommended upgrade: Si9936DY Lower profile/smaller size— see L IT E FOOT equivalent: Si6956DQ |
OCR Scan |
9956DY Si9936DY Si6956DQ P-38889-- | |
Si4936DY
Abstract: Si6954DQ Si9936DY
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Si9936DY Si4936DY Si6954DQ S-47958--Rev. 15-Apr-96 | |
Si4936DY
Abstract: Si6956DQ Si9936DY Si9956DY
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Si9956DY Si4936DY Si9936DY Si6956DQ S-47958--Rev. 15-Apr-96 | |
Si4936DY
Abstract: Si6954DQ Si9936DY
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Si9936DY Si4936DY Si6954DQ S-47958--Rev. 15-Apr-96 | |
Si9936DYContextual Info: Si9936DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 S1 S2 NĆChannel MOSFET NĆChannel MOSFET |
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Si9936DY S-42910--Rev. | |
Si6956DQ
Abstract: Si9936DY Si9956DY
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Si9956DY Si9936DY Si6956DQ P-38889--Rev. | |
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Si4936DY
Abstract: Si6956DQ Si9936DY Si9956DY
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Si9956DY Si4936DY Si9936DY Si6956DQ S-51302--Rev. 18-Dec-96 | |
Contextual Info: Si9936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET |
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Si9936DY 08-Apr-05 | |
Si9936BDY
Abstract: Si9936DY-T1 Si9936BDY-E3 Si9936BDY-T1-E3 Si9936DY
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Si9936BDY Si9936DY Si9936BDY-E3 Si9936BDY-T1 Si9936DY-T1 Si9936BDY-T1-E3 | |
Contextual Info: SI9936DY Transistors Matched Pair of N-Channel Enhancement MOSFETs V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D)4.0 @Temp (øC)70’ IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55 |
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SI9936DY | |
Contextual Info: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching |
Original |
Si9936DY | |
Si9936DYContextual Info: Si9936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET |
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Si9936DY S-00652--Rev. 27-Mar-00 | |
Si9936DYContextual Info: Si9936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET |
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Si9936DY 18-Jul-08 | |
Si4936DY
Abstract: Si6956DQ Si9936DY Si9956DY
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Si9956DY Si4936DY Si9936DY Si6956DQ S-51302--Rev. 18-Dec-96 | |
Si9730Contextual Info: Product is End of Life 12/2014 Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC DESCRIPTION FEATURES The Si9730 monitors the charging and discharging of dualcell lithium-ion battery packs carbon or coke chemistry ensuring that battery capacity is fully utilized while ensuring |
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Si9730 Si9730 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8 |
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Si6543DQ Si6543DQ-T1 Si6543DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |