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    SIHG22N60E Price and Stock

    Vishay Siliconix SIHG22N60EF-GE3

    MOSFET N-CH 600V 19A TO247AC
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    DigiKey SIHG22N60EF-GE3 Tube 793 1
    • 1 $5.16
    • 10 $5.16
    • 100 $5.16
    • 1000 $1.90875
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    Vishay Siliconix SIHG22N60E-GE3

    MOSFET N-CH 600V 21A TO247AC
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    DigiKey SIHG22N60E-GE3 Tube 457 1
    • 1 $5.34
    • 10 $5.34
    • 100 $5.34
    • 1000 $2
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    Quest Components SIHG22N60E-GE3 63
    • 1 $4.5
    • 10 $2.25
    • 100 $2.25
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    Vishay Siliconix SIHG22N60E-E3

    MOSFET N-CH 600V 21A TO247AC
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    DigiKey SIHG22N60E-E3 Tube 12 1
    • 1 $5.34
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    • 1000 $2
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    Bristol Electronics SIHG22N60E-E3 850
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    Vishay Siliconix SIHG22N60EL-GE3

    MOSFET N-CH 600V 21A TO247AC
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    DigiKey SIHG22N60EL-GE3 Tube 500
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    • 1000 $2.1694
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    Vishay Intertechnologies SIHG22N60E-GE3

    N-CHANNEL 600V - Bulk (Alt: 19X1938)
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    Avnet Americas SIHG22N60E-GE3 Bulk 16 Weeks, 3 Days 1
    • 1 $3.45
    • 10 $3.14
    • 100 $2.74
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    SIHG22N60E-GE3 Reel 19 Weeks 500
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    Mouser Electronics SIHG22N60E-GE3 1,187
    • 1 $4.36
    • 10 $3.66
    • 100 $2.36
    • 1000 $2.01
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    Verical SIHG22N60E-GE3 500 500
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    Arrow Electronics SIHG22N60E-GE3 500 34 Weeks 500
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    Newark SIHG22N60E-GE3 Bulk 318 1
    • 1 $3.43
    • 10 $3.08
    • 100 $2.61
    • 1000 $2.51
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    TTI SIHG22N60E-GE3 Tube 5,000 50
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    • 100 $2.26
    • 1000 $1.94
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    TME SIHG22N60E-GE3 1
    • 1 $4.57
    • 10 $4.11
    • 100 $3.27
    • 1000 $3.05
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    EBV Elektronik SIHG22N60E-GE3 20 Weeks 25
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    Find more SIHG22N60E price and stock on Findchips.com

    SIHG22N60E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG22N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO247AC Original PDF
    SIHG22N60EF-GE3 Vishay Siliconix MOSFET N-CH 600V 19A TO247AC Original PDF
    SIHG22N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO247AC Original PDF
    SIHG22N60EL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO247AC Original PDF

    SIHG22N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIHG22N60E

    Abstract: No abstract text available
    Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses


    Original     		PDF SiHG22N60E O-247AC 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHG22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses


    Original     		PDF SiHG22N60E 2002/95/EC O-247AC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHG22N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiHG22N60EL_RC

    Abstract: No abstract text available
    Text: SiHG22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHG22N60EL AN609, 7589u 6282m 6682m 0918u 03-Nov-14 SiHG22N60EL_RC

    sihg22n60e

    Abstract: No abstract text available
    Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHG22N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHG22N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIHG22N60E

    Abstract: No abstract text available
    Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two


    Original     		PDF SiHG22N60E 2002/95/EC O-247AC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low figure-of-merit (FOM) Ron x Qg


    Original     		PDF SiHG22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) typ. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg


    Original     		PDF SiHG22N60EL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836