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    SIS447DN Search Results

    SIS447DN Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIS447DN-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 18A POWERPAK1212 Original PDF 634.09KB
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    Vishay Siliconix SIS447DN-T1-GE3

    MOSFET P-CH 20V 18A PPAK1212-8
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    Vishay Intertechnologies SIS447DN-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIS447DN-T1-GE3)
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    SIS447DN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () Max. ID (A) 0.0071 at VGS = -10 V -18 a 0.0090 at VGS = -4.5 V -18 a 0.0125 at VGS = -2.5 V -18 a Qg (Typ.) 57.5 nC • TrenchFET Gen III P-Channel power MOSFET


    Original     		SiS447DN SiS447DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SiS447DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () Max. ID (A) 0.0071 at VGS = -10 V -18 a 0.0090 at VGS = -4.5 V -18 a 0.0125 at VGS = -2.5 V -18 a Qg (Typ.) 57.5 nC • TrenchFET Gen III P-Channel power MOSFET


    Original     		SiS447DN SiS447DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF