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    RS8KT

    Abstract: diode GP20 rs8jt smd diode code T9 diode GP20 j RS8DT BY500-600 SMD DIODE kpbc10 ZENER 148 gp20 diode
    Text: GENL INSTR/ POlüER 2SE D • 3 0 ^ 1 3 ? DÜ033E3 D ■ T-9/-éô FAST RECO VERY SILIC O N RECT IFIERS continued If(A) PKG TYPE 5.0 P&00 CHIP [i D02C 1AD Ii . 6.0 B.O P6(X) T0220 16.0 T0220CT 30.0 T03P [1 VRRM (volts) i i f ¡ V t' SRP600A RS8AT RP16AT


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    PDF 033E3 T0220 T0220CT GI820 GI821 GI822 GI824 SRP600A BY500-1Q0 BY500-200 RS8KT diode GP20 rs8jt smd diode code T9 diode GP20 j RS8DT BY500-600 SMD DIODE kpbc10 ZENER 148 gp20 diode

    8YV27-200

    Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
    Text: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50


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    PDF VR-50 VR-100 VR-150 VR-300 VR-500 VR-600 VR-1000 GI1001 GI1004 8YV27-200 VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B

    B80 c1500 bridge rectifier

    Abstract: c1500 rectifier B80 c1500 rectifier Bridge Rectifier C800 B80 smd diode 206 3N257 DF08S SMD diode bridge B250 Bridge Rectifiers smd rectifier bridge W06M DF06S 214 H
    Text: GENL INSTR/ POWER 5SE D • T -9 /-& 0 3fl1D137 DD03333 3 ■ Single Phase Bridge Rectifiers 0.9 PKG T YP E 1.0 OFM D FH DFS KBPM WM VRRM vol(s 50 B40 C800DM B40 C800 EDF1AM DF005M ff DF005S 3N246 B40 C1000 in B80 C800DM B80 C800 EDF1BM* DF01M ff DF01S 3N247


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    PDF 3fl1D137 DD03333 C800DM C800DM DF005M DF01M DF02M 0F04M B80 c1500 bridge rectifier c1500 rectifier B80 c1500 rectifier Bridge Rectifier C800 B80 smd diode 206 3N257 DF08S SMD diode bridge B250 Bridge Rectifiers smd rectifier bridge W06M DF06S 214 H

    diode BY127 specifications

    Abstract: GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245
    Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W -& Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO 11 PKG TYPE D041/D015 D015 II I D0204/VP D041 Sr I Il li VRRM (volts) - 50 GP10A BYW27-50 G 1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/


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    PDF 00G3315 D041/D015 D0204/VP GP10A GP10B GP10D BYW27-50 BYW27-100 BYW27-200 BY135GP diode BY127 specifications GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245

    Untitled

    Abstract: No abstract text available
    Text: SBLF1630CT AND SBLF1640CT SCHOTTKY RECTIFIER VOLTA GE RANGE 30 and 40 Volts CURRENT -16.0 Amperes - FEATURES Isolated Plastic Package has Underwriters Flammability Classification 94V-0 Isolated overmolded package ige Metal to silicon rectifier, majority carrier con­


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    PDF SBLF1630CT SBLF1640CT IT0-22QCT 300jxs

    diode SB560

    Abstract: SBL540CT 1N5819 smd diode gp20 diode JTX 1N5822 1N5822 MELF Diode sb160 SBL530CT KPBC10
    Text: GENL INSTR/ POWER 55E » • /- 9 /- & 0 3fl1Dl'37 0003325 4 ■ Schottky Rectifiers General Instrum ent S chottky Barrier Recti­ fiers are characterized by high sw itching speeds and low forw ard voltage drops. A diffused Guard Ring process allows fo r reverse


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    PDF

    1N581B

    Abstract: S8360 S8140 220CT S8530 MBR20 S0241P S-8140
    Text: LOW CURRENT AXIAL SCHOTTKY RECTIFIERS TYPE PACKAGE m VR«20 V VR-30(V) VR-40(V) VR«50(V) VRm60(V) VR«90(V) SB020 thru SB040 MPG06 0.6 SB020 SB030 SB040 VR-100(V) 38120 thru SB1100 DO-41 1.0 SB120 SB130 S8140 SB150 SB160 SB190 SB1100 1N5817 thru 1N5819 DO-41


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    PDF VR-30 VR-40 VRm60 VR-100 SB020 SB040 MPG06 SB030 1N581B S8360 S8140 220CT S8530 MBR20 S0241P S-8140

    Untitled

    Abstract: No abstract text available
    Text: NP16AT THRU NP16MT HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 16.0 Ampere FEATURES TO-220CT ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 •190M-83 .160 4.06) •055(1.48) H4SÜ.TO


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    PDF NP16AT NP16MT O-220CT 190M-83)

    d137 smd diode

    Abstract: rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135
    Text: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECOVERY SILICON RECTIFIERS continued 2.0 1.5 IMA] D0204AP DO15 PKG TYPE ( (Ì D0204AP GP20 % (k \i r 00201AP D0204AP <^ VRRM (volts) l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P 200 RGP15D


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    PDF D0204AP 00201AP D0204AP RGP15J RGP15K RGP15M BYV95C BYV96D BYV96E d137 smd diode rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135

    RS8KT

    Abstract: RS8DT RS8JT rs8gt G1506 P600M byx55 GL852 THRU1N5408 AR25B
    Text: QUICK GUIDE TO PLASTIC RECTIFIERS D041 D041 D041 D041 D0201 AD 0041 00201 AD D0201AD D0201AD D0201 AD D0201 AD D0201AD D0201AD BY396Pthru BY399P* D0201 AD lo A 10 10 10 10 1.2 1.5 2.0 30 3.0 3.0 3.0 3.0 3.0 3.0 (g)T* l°C| 75 100 75 55 55 75 at Tl 55 105


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    PDF 1N4001 1N4007 M100A M100M M100B M100D 1N4933* 1N4937* 1N4933 RS8KT RS8DT RS8JT rs8gt G1506 P600M byx55 GL852 THRU1N5408 AR25B

    DIODE byx55 100

    Abstract: efr135 by207 General instrument 1n4948 1N4946 cross reference BA153G diode SRP100d JTX1N3611 diode rgp10g 1N4937 SMD
    Text: GENL INSTR/ POWER ESE D • 30T0Í37 0 0 Q 3 3 n T ■ 7^ Fast Recovery Silicon Rectifiers General Instrument’s selection of fast recovery rectifiers are designed fo r circuits requiring switching times of 150ns to 500ns. They are offered in a variety of


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    PDF 150ns 500ns. GL-34 RGL34A RMPG06A# RMPG06B» RGP10A RGL34B BYM06-100 DIODE byx55 100 efr135 by207 General instrument 1n4948 1N4946 cross reference BA153G diode SRP100d JTX1N3611 diode rgp10g 1N4937 SMD

    kpbc10

    Abstract: diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041
    Text: 6ENL INSTR/ POüJER 2SE D • 7^9/~éC> 30^0137 G G Q 3 3 m T ■ Standard Silicon Rectifiers t II A PKG TYPE 0.2 0.4 D0204MB D0204MB 0041 n Îl II 0.5 0.5 0.8 1.0 MINI M ELF GL-34 MINI M ELF GL-34 D041 MPG06 I I I VRRM (volts) 50 1N483B GL34A BYM05-50 GP08A


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    PDF GL-34 D0204MB MPG06 BYM05-50 MPG06A# 1N483B GL34A GP08A kpbc10 diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041

    FEP5dt

    Abstract: 1N5614 smd gi1303 GI1301 FEP16GT N645
    Text: GENL INSTR/ POUER 2SE D • 30*10137 DGG3331 T ■ FAST EFFICIENT RECTIFIERS continued 5.0 H (A) PKG TYPE c P20 64 6.0 T0-22CT CHIP G4 k > r 1Ì VRRM (volts) 1a l i l i 50 EGP50A. FE5A FEP5AT EFR5A GI1301 FE6A 100 EGP50B FE5B FEP5BT EFR5B Gl 1302 FE6B 150


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    PDF DGG3331 T0-22CT EGP50A. EGP50B EGP50C EGP50D EGP50F GI1301 GI1303 GI1304 FEP5dt 1N5614 smd FEP16GT N645

    x2 le 224 0,22

    Abstract: dfig
    Text: 55E D GENL INSTR/ POWER • 30=50137 GÜQ3Ô40 Ì ■ T - 0 1 ' I? NP 16AT THRU NP 16MT HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT- 16.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Flammabiiity Classification 94V-0


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    PDF T0-220CT MIL-STD-202, x2 le 224 0,22 dfig

    RKBU4B

    Abstract: B 80 C3700 - 2200 bridge B250 C5000 KBU diode bridge KPBC10 gp20 diode B80 smd diode DD0333S kbu8k 304 GENERAL INSTRUMENT b80
    Text: GENL INSTR/ POWER 25E D • 36=10137 DD0333S 7 ■ SINGLE PHASE BRIDGE RECTIFIERS continued PGK T Y P E 4.0 3.0 IM A ) 5.0 BC KB PC1 6.0 KBU KB PC6 f VRRM (volts) 50 K B P C 10 0 5 B40 C 3 700 /2200 K B L0 0 5 ff KBU4A RKBU4A B40 C 5000/3300 KBU6A# KB PC6005


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    PDF DD0333S PC6005 RKBPC600 C5000/3300 RKBPC601 C3700 C5000/330Q RKBPC602 RKBPC604 RKBU4B B 80 C3700 - 2200 bridge B250 C5000 KBU diode bridge KPBC10 gp20 diode B80 smd diode kbu8k 304 GENERAL INSTRUMENT b80