T1P31B Search Results

TIP31A

Abstract: T1P31 T1P31B TIP31 TIP31B TIP31C TIP32 TIP32A TIP32B TIP32C
Contextual Info: PANASONIC INDL/ELEK -CIO k ^ a a s s Goianas a 1EE D Silicon NPN Power Transistors r - 3 - / / 3 ¿TIP31A ttíP31B ilutes TO-220 Package Absolute Maximum Ratings Ta=25°C Symbol TIP31 T1P31A T1P31B TIP31C Unit Collector-Base Voltage Collector-Emitter Voltage

npn, transistor, sc 107 b

Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.

T1P122

Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
Contextual Info: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400

Contextual Info: TIP32F; 32AF TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 711002b 00434=10 210 M P H I N T -J 3 -I 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed

T1P31DF

Contextual Info: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed

T1P31

Abstract: T1P31A T1P31C T1P31B T-33-H TIP31 TIP31C TIP32 TIP32A TIP32B
Contextual Info: PANASONIC INDL/ELEK {IC> t^ a a s a ooicmas ö 1EE D Silicon NPN Power Transistors r - 3 3 -// Ü P 31 A tT IP 31 B ;|P 3 t C TO-220 Package Absolute Maximum Ratings Ta=25°C Hem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

TlP31A

Contextual Info: PANASONIC INDL/ELEK {IC> t ^ a a s a ooicmas ö 1EE D Silicon NPN Power Transistors r - 3 3 - / / tlP31Ä ttlP31B; ;iP3tc TO-220 Package Absolute Maximum Ratings Ta=25°C Hem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

T1P31C

Abstract: b0239c BDXS3 B0241A T1P122 B0243 B0243B T1P-31C T1P120 BDXS3C
Contextual Info: MIN MAX A B C E F G H J 14,42 9,63 3 ,56 K i M N 12,70 - 16.51 10.67 4,83 0 .9 0 1,40 3 ,68 2,79 3,43 0 ,56 14,73 6,35 2,92 DIM o f1 i| L D J g - 1,15 3,75 2,29 2,54 - 2,03 7 3 1,2 4 DEG TP-220 Power Package Transistors NPN Maximum Rating« Type No. Electrical Characteristics (Tas35*C, Unless Otherwise Specified)

T1P31

Abstract: texas instruments tip31 T1P30C Texas Instruments TIP31C TIP31C T1P-31 transistor tip31 TIP31 texas instruments tip31a TIP30
Contextual Info: TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS JULY 1968 - R EVISED MAY 1995 • Designed for Complementary Use with the TIP29 Series • 30 W at 25°C Case Temperature TO -220 PACKAGE TOP VIEW • 1 A Continuous Collector Current BC • 3 A Peak Collector Current

31AF

Abstract: 31df TIP32AF T1P31 31DF 4 2B T1P31C TIP31 PNP Transistor TIP31BF TIP31F TIP32BF
Contextual Info: TIP31F; 31AF TIP31BF; 31 CF T1P31DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed

T1P122

Abstract: T1P41C BD211 T1P41A BU40S t1p41 T1P121 T1P49 2SC3039 BU806
Contextual Info: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s No. 2SC3039 MJE13005 TIPSO v CB0 (V) Min 500 700 500 VCEO (V) Min 400 400 400 v EB0 (V) Min 7 9 5 Electrical C h ara cte ristics PD (W) 8 Tc=25°C 50 _ | f l Typs 10 e vC8 e "FE (V) Min 400 75 40 ic

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

T1P31A

Abstract: tip318 T1P31 tip318 transistor
Contextual Info: TIP31, TIP31A, TIP318, TIP31C N PN SILICON PO W ER TRANSISTORS Copyright Q 1997, Power Innovations Limited, UK_ JULY 1968 - REVISED MARCH 1997 • Designed for Complementary Use with the TIP32 Series • 40 W at 25°C Case Temperature •