T4C16M Search Results

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

MT4C16M1

Contextual Info: ADVANCE DRAM 16 MEG x1 DRAM 5.0V FAST PAGE MODE FEATURES • Industry-standard x l pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single power supply: +5V ±10% • Low pow er, 4mW standby; 200m W active, typical

Contextual Info: ADVANCE T4C16M1D1 16 MEG X 1 DRAM M IC R O N DRAM 16 MEG x1 DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single power supply: +5V ±10% • Low power, 3m W standby; 330mW active, typical

Contextual Info: MICRON TECHNOLOGY INC blllSMl 0Q0H23H 474 • MRN SSE ]> PRELIM INARY Ut.KNOLOO'» M IC - T DRAM H fc -t-J - \ S 16 MEG X 1 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, tim ing, functions and

G5628

Contextual Info: PRELIMINARY M T4 L C16M 1A1 16 MEG X 1 DRAM |v ii(= n o N DRAM 16 MEG x1 DRAM FEATURES PIN ASSIGNMENT (Top View) • Industry-standard x l pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single power supply: +5V ±10% only or +3.3V ±10%