TB16N Search Results

Contextual Info: TB16NB25 N - CHANNEL 250V - 0.220ft - 1 6A - TO-263 PowerMESH MOSFET TYPE V S TB16N B25 R D S o n Id < 0 .2 8 Q. 16 A dss 250 V . . TYPICAL R D S (on) = 0.220 £2 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED . EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: MOTOROLA Order this document by TB16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB16 N2 5 E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: : 1 I TKMS; T YP E : 6 A r ms TB£N TB6N TB6N TBPN TB6 N A T j M= : VRRM" " VDRM ! (V) 115°C 6 # 2 3 4 5 6 JUNCTION TEMPERATURE 25°0 :[TSM ; xE ir - tdm ±VfjT 1ilq-j- : ± I H :± vtm 'StxTM “ t jm ! » T .TM max. ! max. 1 max. (A) : ( iTlA) (V) : ImA) : imA) ; ( V )

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”

eel 16n

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet TB16N25E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M o to ro la P re fe rre d O e v lc e T M O S P O W E R FE T 16 A M P E R E S 250 VO LTS N-Channel Enhancement-Mode Silicon Gate