edo ram 72pin
Abstract: TC5117405 TC5118165 TC5118 bsg70 simm EDO 72pin 104ns TC5118165BJ hidden refresh TC51181
Text: TOSHIBA THM3210B5BS/BSG-60 THM3210B5BS/BSG-70 1,048,576 WORD X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3210B5BS/BSG is a 1,048,576 words by 32 bits dynamic RAM module which assembled 2 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which are required high density and large capacity such
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THM3210B5BS/BSG-60
THM3210B5BS/BSG-70
THM3210B5BS/BSG
TC5118165BJ
890mW
THMxxxxxx-60)
575mW
THMxxxxxx-70)
edo ram 72pin
TC5117405
TC5118165
TC5118
bsg70
simm EDO 72pin
104ns
hidden refresh
TC51181
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EIAJ ED-4701-1
Abstract: tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB
Text: [3] 東芝半導体製品の品質･信頼性保証 1. 1.1 信頼性試験とは 信頼性試験の意義と目的 半導体デバイスの信頼性試験の目的としてデバイスがメーカーから出荷されお客様の機器組み立て 調整工程を経て、最終ユーザーにおいて所望の期間、機器の機能、性能が発揮されることを確認する
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M65BJ
TC5117405BST
TC51V16165BFT
TC5118165BFT
65deg
C/150deg
300cycles)
TC5117405BSJ
TC514265DJ
TC5118165BJ
EIAJ ED-4701-1
tc5118165bj
EIAJ ED-4701-1 C-111A
TC5118165
TC514265DJ
a107a
tc5165165
tc5117405
TC5165165B
failure rate TDDB
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tc5118165bj
Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide
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TC5116405BSJ/BST-60
TC5116405BSJ/BST-70
TC5116405BSJ/BST
300mil)
cycles/64ms
TC51V16325BJ:
SOJ70-P-400A
tc5118165bj
TC5118165
TC5117405
SOJ42-P-400
TC5117405BSJ
hidden refresh
TSOP70-P-400
TC51181
TC5118
TOSHIBA TSOP50-P-400
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TC5117405
Abstract: TC5118165 equivalent of BFT 51 TC51181 TC5118165B
Text: TOSHIBA THM3680G5BS/BSG-60 THM3680G5BS/BSG-70 8,388,608 WORD X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3680G5BS/BSG is a 8,388,608 words by 36 bits dynamic RAM module which assembled 16 pcs of TC5117405BSJ and 2 pcs of TC5117445BSJ on the printed circuit board. This module is optimized for application to the systems which are required high
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THM3680G5BS/BSG-60
THM3680G5BS/BSG-70
THM3680G5BS/BSG
TC5117405BSJ
TC5117445BSJ
620mW
THMxxxxxx-60)
990mW
THMxxxxxx-70)
THM3680G5BS/BSG-60/70
TC5117405
TC5118165
equivalent of BFT 51
TC51181
TC5118165B
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tc5118165bj
Abstract: TC5118165B TC5118165 ct rac 70 TC5118165BFT
Text: TOSHIBA TC5118165BJ/BFT60/70 PRELIM INARY 1,048,576 W O RD X 16 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5118165BJ/BFT60/70
TC5118165BJ/BFT
TC5118165BJ/
DR16160695
TC5118165B
J/BFT-60/70
B-119
tc5118165bj
TC5118165
ct rac 70
TC5118165BFT
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Untitled
Abstract: No abstract text available
Text: ^017240 TOSHIBA OOEÔMbM 354 THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3210B5BS/BSG is a 1,048,576 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 2 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which
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THM3210B5BS/BSG-60/70
THM3210B5BS/BSG
TC5118165BJ
890mW
THM3210B5BS/BSG-60)
575mW
THM3210B5BS/BSG-70)
S690Z0M
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TC5118165B
Abstract: TC5118165 thm322
Text: TOSHIBA THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which
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THM3220C5BS/BSG-60/70
THM3220C5BS/BSG
TC5118165BJ
THMxxxxxx-60)
596mW
THMxxxxxx-70)
THM3220C5BS/BSG
89MAX.
11111m
TC5118165B
TC5118165
thm322
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toshiba dram
Abstract: TC5118165 TC5118165B tc5118165bj
Text: TOSHIBA DRAM Module AC Conditions No. 30 TC5118165BJ/BFX TC51V18165BJ/BFT Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14 Access Time from CAS -
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TC5118165BJ/BFX
TC51V18165BJ/BFT
THMxxxxxx-60
THMxxxxxx-70
toshiba dram
TC5118165
TC5118165B
tc5118165bj
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Untitled
Abstract: No abstract text available
Text: TOSHIBA WM ^0^7240 00Bfl47b 07b • THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which
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00Bfl47b
THM3220C5BS/BSG-60/70
THM3220C5BS/BSG
TC5118165BJ
89MAX.
THM3220C5BS/BSG
17EHfl
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Untitled
Abstract: No abstract text available
Text: ^ 7 2 4 0 TOSHIBA QQEÛ37B 54T TC5118165BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT HYPER PAGE EDO DYNAMIC RAM in Description The T C 5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC 5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5118165BJ/BFT-60/70
5118165BJ/BFT
5118165BJ/
DR16160695
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TC5118165
Abstract: TC5118165BFT
Text: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M
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TC5118165BJ/BFT
TC511
SOJ42
TC5118165BJ-32
TC5118165
35MAX
TC5118165BFT
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