TH58BVG3S0HBAI6 Search Results
TH58BVG3S0HBAI6 Price and Stock
KIOXIA TH58BVG3S0HBAI6(Alt: TH58BVG3S0HBAI6) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TH58BVG3S0HBAI6 | 111 Weeks | 338 |
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TH58BVG3S0HBAI6 Datasheets Context Search
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Contextual Info: TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. |
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TH58BVG3S0HBAI6 TH58BVG3S0HBAI6 4096blocks. 4224-byte 4224-bytes 2013-09-20C |