THMY648091EG Search Results

TC59SM716FT

Contextual Info: TO SH IBA THMY648091 EG-80#-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648091EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY648091 EG-80f-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648091EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT DRAMs and an unbuffer on a printed circuit board.

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit