TIP112 Search Results

MJE224

Abstract: tip111g TIP11X
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •

P112

Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are

TIP NPN

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
Contextual Info: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP111 TIP112 NPN TIP115 TIP116 TIP117 PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP112 Features • • • High DC Cureent Gain: hFE=1000 @ VCE=4.0V, IC=1.0A Low Collector-Emitter Saturation Voltage Industrial Use NPN Epitaxial Silicon

Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 H P H I N T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N -P -N epitaxial-base transistors in m o n o lith ic D arlin g to n c irc u it fo r au dio o u tp u t stages and general purpose a m p lifie r and sw itching applications. T 0 -2 2 0 A B plastic envelope. P-N-P co m p lem ents are

Contextual Info: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP110, TIP111 and TIP112 T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature

darlington power transistor

Abstract: TIP110/111/112 TIP110-D transistor 400 volts.50 amperes 1N5825 MSD6100 TIP110 TIP111 TIP112 TIP115
Contextual Info: ON Semiconductort NPN Plastic Medium-Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general–purpose amplifier and low–speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ @ IC

TIP11

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: IRAN SYS TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS m C TR O M C S LIMITED T0-220 PACKAGE TOP VIEW • Designed for Complementary Use with TIP110, TIP111 and TIP112 B C • 50 W at 25°C Case Temperature C C • 4 A Continuous Collector Current

t1p110

Abstract: TLP110
Contextual Info: G E SOLID STATE 3875081 G E El SOLID STATE d F | 3Û7SGÛ1 DG1733D 3 |~~ Ö 1É 17330 D T ' 3 3 -2 3 D arlin g to n P o w e r Tran sistors_ TIP110, TIP111, TIP112 1336 File Number 2-Ampere N-P-N Darlington Power Transistors < TERMINAL DESIGNATIONS For Low and Medium Frequency Power

KSH112

Abstract: TIP112
Contextual Info: KSH112 KSH112 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP112

transistor 86 y 87

Contextual Info: KSH112 NPN SILICON DARLINGTON TRANSISTOR D PACK FOR SURFACE MOUNT APPLICATIONS • • • • • High D C Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I.PACK, I * Suffix) Electrically Similar to Popular TIP112

transistor c 1971

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 C 1971 transistor transistor 1971
Contextual Info: TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● DECEMBER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP115, TIP116 and TIP117 TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature

TIP112

Abstract: TIP111 TIP110 TIP115 TIP116 TIP117
Contextual Info: TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP115, TIP116 and TIP117 TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current B 1 ● Minimum hFE of 500 at 4V, 2 A C

Contextual Info: TIP112 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)50# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.500

10 amp npn darlington power transistors

Abstract: transistor 600 volts.50 amperes 100 amp npn darlington power transistors transistor 400 volts.50 amperes driver transistor hfe 60 TIP110/111/112 TO-220 Darlington npn to-220 NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general-purpose amplifier and low-speed switching applications.

Contextual Info: TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP115, TIP116 and TIP117 TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current B 1 ● Minimum hFE of 500 at 4V, 2 A C

Contextual Info: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP110, TIP111 and TIP112 TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current B 1 ● Minimum hFE of 500 at 4V, 2 A C

sgs110

Abstract: SGS116
Contextual Info: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration

MJE224

Abstract: pnp power transistor
Contextual Info: ON Semiconductor NPN Plastic Medium−Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general−purpose amplifier and low−speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ) @ IC

tip 25c

Abstract: TIP 120c TIP NPN npn tip TIP117 tip 117 tip darlington pnp 470M darlington tip 110 TIP112
Contextual Info: S A N Y O NPN TIP110 TIP111 TIP112 SEM ICONDUCTOR PNP TIP115 TIP116 TIP117 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLFS, 2 AMPERE HIGH CURRENT GAIN h F E = 4000 typ. @3V, 1.5A LOW SATURATION VOLTAGE V C E S A T = 1-0V typ. @1.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN

TIP111G

Abstract: TIP117 TIP110 TIP110G TIP111 TIP112 TIP112G TIP115 TIP115G TIP116
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Designed for general-purpose amplifier and low-speed switching applications. Features

Contextual Info: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage

Contextual Info: File Number TIP110, TIP111, TIP112 1336 H A RR IS S E M I C O N D SE CT OR 5bE D 4 3 D 2 27 1 □ □ 4 D T 2 2 ÛTT » H A S T-SSr-'ZSf 2-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS For Low and Medium Frequency Power Switching, Hammer Driver, Audio Amplifier, and