TIPL774 Search Results

TIPL774

Abstract: P6019 P6020 lZ-300 P6042 TIP41 K041 TIP41 Texas Instruments NPN Transistor 30A 400V
Contextual Info: TEXAS I NS TR -COPTO} 8961726 TEXAS De J IN S T R O P T O 0D37Cm 62 C 3 7 0 9 1 r TIPL774 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTOR O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 T-3 3 - 2 9 20 A Continuous Collector Current 150 W at 50°C Case Temperature

Contextual Info: TEXAS INSTR - COPTO} 8961726 TEXA S ^2 IN S T R DE <OPTO> 0D37D‘ìl f 62C 3 7 0 9 1 TIPL774 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTOR OCTOBER 19 8 2 - R EV ISED O CTOBER 1984 20 A Continuous Collector Current T -3 3 -2 9 150 W at 5 0 °C Case Temperature

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

ESM30450V

Abstract: MJ10100 esm40450 svt6062 2S01314 solitron transistors ia5062 PTC6002 sgs-ates transistors j200
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) Po Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (8) tf Max Toper (8) (Oe) Max Package Style NPN Darlington Transistors, (Co nt' d) 5 10 BU922 BU922P BU922P BU922P GE6252

TIS84

Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
Contextual Info: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: S EM ICO ND UCT OR TECHNOLOGY OSE D II fll3b45û DGOGSHfl 1 “ NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TR A N SISTO R S STI Typs Industry Type Power Dissipation @25 °C watts •CEV VCEV (volts) VcEO (volts) (volts) VCE(SAT.) Vbe (SAT.)@ Ic hFE lc (Min.)

SVT 6001 transistor

Abstract: svt6062 SVT6251 SVT-6060 s252 tipl785a SVT-6000
Contextual Info: •SEMICONDUCTOR TECHNOLOGY. INC._ SEM ICONDUCTOR TECHNOLOGY O SE D I û l B t M S f l If NPN & PNP' SILICON DARLINGTON TRANSISTORS Power Dissipation @ 25°C watts VcBO (volts) (volts) SVT-60002 SVT-6000 SVT-60012SVT-6001 SVT-60022 SVT-6002

SVT 6001 transistor

Contextual Info: ^ n .% NPN & PNP’SILICON DARLINGTON TRANSISTORS Power STI Type Type @ 25 °C wans »CER (volts) (volts) ua (Min.) 135 135 135 135 135 400 450 500 400 450 400 450 500 400 450 400 450 500 400 450 .50 .50 .50 .50 .50 60 60 60 100 100 SVT-60622 SVT-6062 SVT-62512 SVT-6251

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.