TLN110 Search Results

Contextual Info: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA

Contextual Info: TOSHIBA TLN110 TOSHIBA INFRARED LED GaAs INFRARED EMITTER T L N 1 10 Unit in mm INFRARED LED FOR REMOTE CONTROL SYSTEM REMOTE CONTROL SYSTEM SMOKE SENSOR OPTO-ELECTRONIC SWITCH • • High radiant intensity : Ig = 30mW / sr TYP. Excellent linearity of radiant intensity and modulation by pulse

"Smoke Sensor"

Abstract: TLN110 TPS703
Contextual Info: TLN110 TOSHIBA TOSHIBA INFRARED LED GaAs INFRARED EMITTER T L N 1 10 Unit in mm INFRARED LED FOR REMOTE CONTROL SYSTEM REMOTE CONTROL SYSTEM SMOKE SENSOR OPTO-ELECTRONIC SWITCH • • High radiant intensity : Ig = 30mW / sr TYP. Excellent linearity of radiant intensity and modulation by pulse

Contextual Info: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead Free Product Remote−control Systems Opto−electronic Switches Unit: mm • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation

TLN110

Abstract: TPS703
Contextual Info: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Remote−control Systems Opto−electronic Switches Unit: mm • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.

Contextual Info: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead(Pb)-Free Remote−control Systems Opto−electronic Switches Unit: mm • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation

TLP806

Abstract: TLP802 tlp850 TLP805 TLP852 TLRA280 photo transistor application TPS833 TLP816 TLP907
Contextual Info: 5 . Classification Guide for Photo Sensor Packages •E m itter and D etecto r Type w ith To-18 Lens i3 m m Resin #>m m Resin To-18 Flat iffim Appearance .ifn H E ifpjffef • ' /J P * ' / 'jifo, TLN110 TLN 115A TLN 205 TLN 221 TLN 222 TLN 223 TLN 224 TLN 227

Contextual Info: GaAs Infrared E m itter TLN110 A pplications • Remote Control System • Smoke Sensor oo + I • Optical Switch Features • High Radiant Intensity : lE= 30mW / sr TYP. 0-5 ± 0 .1 • Capable of Pulse Operation • Recommended for Use with the TPS703 in Remote

TCD2959BFG

Abstract: TCD1709DG TCD2964BFG TCD2713DG TCD2716DG tcd2563bfg TCD1708DG tcd2704dg-1 TCD2955BFG TCD2959
Contextual Info: Sensors/Image Pickup Devices Photosensors z 272 Image Sensors z 276 271 Photosensors Infrared LEDs and Visible LEDs for Sensor Light Sources Electrical/Optical Characteristics Ta = 25°C Part Number with Rank Part Number TLN108(F) TLN201(F) TLN105B(F) TLN110(F)

TLN110

Abstract: TPS703
Contextual Info: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead Free Product Unit: mm Remote−control Systems Opto−electronic Switches • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation

TLN110

Abstract: TPS703 46C4
Contextual Info: TLN110 F GaAs赤外発光 東芝赤外LED TLN110(F) ○ 各種リモコン機器 ○ 光電スイッチ 単位: mm • 放射強度が大きい。: IE=30mW / sr(標準) • 放射強度の直線性が良くパルス動作、高周波による変調ができます。

TLP805

Abstract: TLP806 TLP834 TLRA280
Contextual Info: lü.General Index TYPE No. TLN101A TLN102 TLN103A TLN104 TLN104 LB TLN105B TLN107A TLN108 TLN110 TLN113 TLN115A TLN117 TLN119 TLN201 TLN203 TLN205 TLN208 TLN210 TLN211 TLN212 TLN221 TLN222 TLN223 TLN224 TLN225 TLN226 TLN227 TLP507A TLP800A TLP801A TLP802

TLN110

Abstract: TPS703
Contextual Info: TLN110 TO SH IBA TOSHIBA INFRARED LED GaAs INFRARED EMITTER T L N 1 10 INFRARED LED FOR REMOTE-CONTROL SYSTEMS Unit : mm REMOTE-CONTROL SYSTEMS resin build-up • High radiant intensity : Ie = 30mW / sr typ.) • Excellent radiant-intensity linearity. Modulation by pulse

Contextual Info: TOSHIBA TLN110 TOSHIBA INFRARED LED Ti • n m 'm GaAs INFRARED EMITTER 11 n m m Unit in mm INFRARED LED FOR REMOTE CONTROL SYSTEM REMOTE CONTROL SYSTEM SMOKE SENSOR OPTO-ELECTRONIC SWITCH • High radiant intensity ; Ig - 30mW / sr TYP. • Excellent linearity of radiant intensity and modulation by pulse

Contextual Info: NPN Photo Transistor TPS611 A pplications • Photo Sensor • Photoelectric Counter • Various Kinds of Readers • Position Detection • Remote Controls Features • 05mm Epoxy Resin Package • High Sensitivity: lL= 120pA Typ. • Half Value Angle: 01/2= ± 8° (Typ.)

TLN110

Abstract: TLN205 TPS611
Contextual Info: TOSHIBA TPS611 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 1 Unit in mm FOR PHOTO SENSOR PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • • • • • <f>5mm epoxy resin package black High sensitivity :I l = 12(V*A(TYP.)

Contextual Info: TPS610 F TOSHIBA Photo Transistor Silicon NPN Epitaxial Planar TPS610(F) Lead Free Product Photoelectric Counter Unit in mm Various Kinds Of Readers Position Detection • φ5mm epoxy resin package • High sensitivity: IL = 250µA(typ.) • Half value angle: θ1/2 = ±8° (typ.)

Toshiba phototransistor

Contextual Info: TPS611 F TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS611(F) Lead(Pb)-Free Photoelectric Counter Various Kinds Of Readers Position Detection Unit in mm • φ5mm epoxy resin package(black) • High sensitivity: IL = 120 A(typ.) • Half value angle: θ1/2 = ±8°(typ.)

Contextual Info: TPS611 F TOSHIBA Photo Transistor Silicon NPN Epitaxial Planar TPS611(F) Lead Free Product Photoelectric Counter Unit in mm Various Kinds Of Readers Position Detection • φ5mm epoxy resin package(black) • High sensitivity: IL = 120µA(typ.) • Half value angle: θ1/2 = ±8°(typ.)

led 5050

Abstract: TLN100 p832 TLN1050 TLN1000 photo sensor TLN1108 TLN108 TLN110 TLN117
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ 光センサ S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / Contents 1. 品番索引 …………………………………………… 2

TC4009BP

Abstract: DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F
Contextual Info: 光センサ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

SP900

Abstract: TLN110 TPS611 TOSHIBA PHOTOTRANSISTOR SILICON NPN
Contextual Info: TPS611 F TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS611(F) Photoelectric Counter Various Kinds Of Readers Position Detection Unit in mm • φ5mm epoxy resin package(black) • High sensitivity: IL = 120 A(typ.) • Half value angle: θ1/2 = ±8°(typ.)

Contextual Info: TOSHIBA TPS611 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 1 FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • 05mm epoxy resin package black • High sensitivity • H alf value angle : d±= ± 8° (TYP.)

Contextual Info: NPN Photo Transistor TPS610 A pplications • PhotoSensor • Photoelectric Counter • Various Kinds of Readers * Position Detection • Remote Controls Features • 05mm Epoxy Resin Package » High Sensitivity: lL= 250|iA Typ. • Half Value Angle: QVi = ± 8° (Typ.)