TN0606N3 Search Results

Contextual Info: TN0606N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)800m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.2 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

TN0520N3

Abstract: TN0602N2 TN0204N2 TN0524N2 tn0620n2 TN0202N3 TN0202ND TN0204N3 TN0204ND TN0520N2
Contextual Info: - 332 - f Ta=25cC y Vds m % tt € or f Vdg it TN0202N2 TN0202N3 TN0202ND TNQ2Q4N2 TN0204N3 TN0204ND TN0520N2 TN0520N3 TN0520ND TN0524N2 TN0524N3 TN0524ND TN0602N2 TNÛ6Q2N3 TN0602ND TN06Û4N2 TN0604N3 TN0604ND TN0604WG TN0606N2 TN0606N3 TN0606N5 TN06O6NO

TN0606

Abstract: TN0606N3 TN0606N5 TN0610 TN0610N3
Contextual Info: TN0606 TN0610 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON BVDGS (max) † ID(ON) (min) VGS(th) (max) Order Number / Package TO-92 TO-220 60V 1.5Ω 3.0A 2.0V TN0606N3 TN0606N5 100V 1.5Ω 3.0A 2.0V TN0610N3

Contextual Info: TN0606 TN0610 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R dS ON Id(ON) ^GSIth) (m ax) (min) (max) TO-39 TO-92 TO-220 Quad P-DIP* Quad C-DIP* 60V 1.5 0 3.0A 1.6V — TN0606N3 TN0606N5 TN0606N6 TN0606N7

TN0606

Abstract: TN0606N2 TN0606N3 TN0606N5 TN0606N6 TN0606N7 TN0606ND TN0610 TN0610N2 TN0610N3
Contextual Info: TN0606 TN0610 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON BVDGS (max) Order Number / Package ID(ON) (min) VGS(th) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE† 60V 1.5Ω 3.0A 1.6V TN0606N2 TN0606N3

Contextual Info: TN0606 TN0610 _ N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S ON Order Number / Package I d (ON) ^GS(th) BVdgs (max) (min) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* 60V 1.5Q 3.0A 1.6V TN0606N2 TN0606N3 TN0606N5 TN0606N6

TN0606

Abstract: TN0606N3 TN0606N5 TN0606N6 TN0606N7 TN0610 TN0610N2 TN0610N3 TN0610N5 TN0606N
Contextual Info: TN0606 TN0610 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON BVDGS (max) Order Number / Package ID(ON) (min) VGS(th) (max) TO-39 TO-92 TO-220 Quad P-DIP* Quad C-DIP* 60V 1.5Ω 3.0A 1.6V — TN0606N3 TN0606N5

Contextual Info: TN0606 TN0610 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package 60V 1.5Ω 3.0A 2.0V TN0606N3 100V 1.5Ω 3.0A 2.0V TN0610N3 TO-92 Features Low Threshold DMOS Technology

TN0606

Abstract: TN0606N3 TN0610 TN0610N3
Contextual Info: TN0606 TN0610 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package 60V 1.5Ω 3.0A 2.0V TN0606N3 100V 1.5Ω 3.0A 2.0V TN0610N3 TO-92 Features Low Threshold DMOS Technology

TN0606N7

Abstract: 2T-3
Contextual Info: G à S u p e r te x in c TN0606 TN0610 . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R q S ON (max) Order Num ber / Package f b v dgs V GS(ttl) i B V DSS/ (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICEt 60V 1.5Q

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

DN2540N5

Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
Contextual Info: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5

TN0606

Abstract: marking TN
Contextual Info: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold - 2.0V max. High input impedance Low input capacitance - 100pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: Supertex inc. TN0606 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Contextual Info: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case

Contextual Info: Supertex inc. TN5325 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► Low threshold 2.0V max. High input impedance and high gain Free from secondary breakdown Low CISS and fast switching speeds Applications

Contextual Info: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

N06A

Contextual Info: T N 06A Ljf Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package l i BVdss/ R dS<ON max) b v dgs V gs(ih) (max) TO-39 TO-92 DICE* TO-220 Quad P-DIP Quad C-DIP* 60V

N06A

Contextual Info: T N 06A Lf Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss/ R ds ON) (max) b v dgs Order Number / Package ' d(ON) Vûs<th) (min) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP*