TN250 Search Results

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

TN25L

Contextual Info: ^ Supertex me. T N 25 L Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B Vdss / ^DS O N ^G S fth ) • d (ON) b v dgs (max) (max) (min) 20V 1.0Q 1.6V 4.0 A 40V 1.0CÌ 1.6V 4.0A Order Number / Package TO-243AA* — TN2504N8

Contextual Info: ^ TN2502 Supertex ine. TN2504 Low T hresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ ^D S O N ^ G S (th | I d (ON) b v dgs (max) (max) (min) TO-243AA* DICEt 20V 1.0Q 1.6V 4.0A — TN2502ND 40V 1.0Q

TN2504

Contextual Info: TN2504 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2504 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

fet sot-89 marking code

Abstract: FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504
Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

p-channel DMOS

Abstract: P024 TN2502ND TN2504 TN2504ND TP2502N8
Contextual Info: TN2502/TN2504 TN2502 TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* DICE† 20V 1.0Ω 1.6V 4.0A — TN2502ND 40V 1.0Ω 1.6V 4.0A

Contextual Info: TN2504 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON VGS(th) ' d (ON) BVoos (max) (max) (min) TO-243AA* Diet 40V i.o n 1.6V 4.0A TN2504N8 TN2504ND 'S a m e as SOT-89. Product supplied on 2000 piece ca rrier tape reels.

Contextual Info: TN2501 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold High input impedance Low input capacitance 110pF max. Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off)

Contextual Info: TN2501 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

MARKING CODE BV sot-89

Abstract: TN2501 A12220 fet sot-89 marking code fet sot-89 product marking marking re SOT89 sot89 11
Contextual Info: TN2501 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN2501

Abstract: TN2501N8 TN2501ND
Contextual Info: TN2501 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) 18V 2.5Ω 250mA 1.0V Order Number /Package TO-243AA* Die† TN2501N8 TN2501ND *Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

TN2504

Abstract: SOT89 FET marking TN5LW
Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN25A

Contextual Info: T N 25 A Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV qSS ! ^DS O N ^ G S (th ) ' d <ON) BV dgs (max) (m ax) (min) TO-243AA* 60V 1 .5 0 1.6V 3.0A — TN2506ND 100V 1.5 0 1.6V

Contextual Info: TN2501 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / ^ DS O N I d (ON) ^ G S Ith ) b v dgs (max) (min) (max) 18V 2.5Q. 250mA 1.0V Order Number /Package Diet TO-243AA* TN2501N8 TN2501ND *S am e as SOT-89. Product supplied on 2000 piece ca rrie r tape reels.

Contextual Info: TN2504 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet 40V 1.0& 1.6V 4.0A TN2504N8 TN2504ND *S am e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels.

TN2501

Contextual Info: Supertex inc. TN2501 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2501 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

design motherboard tutorial

Abstract: DC MOTOR DRIVE WITH LM324 latest computer motherboard circuit diagram LM324 as V to I converter computer MOTHERBOARD CIRCUIT diagram Rabbit 3000 single channel adc Rabbit-3000 circuit diagram of Rabbit 4000 free circuit diagram of motherboard DC MOTOR SPEED CONTROL USING lm324
Contextual Info: TN250 Designing With a RabbitCore Module Introduction RabbitCore modules are designed to mount directly on a motherboard of your own design for quick integration into your embedded application. The RabbitCore modules already have the integrated and tested

TN2501

Abstract: TN2501N8 TN2501ND SOT-89 marking TN5U
Contextual Info: TN2501 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) 18V 2.5Ω 250mA 1.0V Order Number /Package TO-243AA* Die† TN2501N8 TN2501ND *Same as SOT-89. † Product supplied on 2000 piece carrier tape reels.

Contextual Info: _ S ii ir m m m m tr iwitfuwi » zj r ^ 1i . r I . r »* TN2502 TN2504 Low Threshol , N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^GS(th) I d (ON) Order Number / Package BVdgs (max) (max) (min)

TN2501

Contextual Info: TN2501 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2501 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: Gì Supertex inc. TN2501 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V d ss/ B V Dgs ^D S O N *D(ON) (max) (min) V gs (th>* (max) 2.5Q 250mA 1.0V 18V Order Number /Package TO-243AA* Dice* TN2501N8 TN2501ND S c re e n in g to 0 .8V available.

Contextual Info: Supertex inc. TN2501 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold High input impedance Low input capacitance 110pF max. Fast switching speeds Low on-resistance Free from secondary breakdown