TP2640LG Search Results
TP2640LG Price and Stock
Microchip Technology Inc TP2640LG-GMOSFET P-CH 400V 86MA 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TP2640LG-G | Cut Tape | 4,011 | 1 |
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TP2640LG-G | Reel | 6 Weeks | 3,300 |
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TP2640LG-G | 3,197 |
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TP2640LG-G | Reel | 3,300 |
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TP2640LG-G | Bulk | 6 Weeks | 3,300 |
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TP2640LG-G | Reel | 6 Weeks |
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Buy Now | ||||||
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TP2640LG-G |
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TP2640LG-G | 1 |
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TP2640LG-G | 3,300 |
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TP2640LG-G | 8 Weeks | 3,300 |
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TP2640LG-G | 7 Weeks | 3,300 |
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TP2640LG-G |
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TP2640LG Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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TP2640LG | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | |||
TP2640LG | Supertex | P-Channel Enhancement Mode Vertical DMOS FETs | Scan | |||
TP2640LG-G |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 400V 0.086A 8SOIC | Original |
TP2640LG Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TP2640LG Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)700m @Temp (øC)150# IDM Max (@25øC Amb)1.25 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.3# Minimum Operating Temp (øC)-55 |
Original |
TP2640LG Junc-Case24 | |
Contextual Info: Prelim inary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) BVdgs (max) (max) (min) SO-8 TO-92 DICE+ -350V 15Q -2.0 V -0.7A - TP2635N3 TP2635ND -400V 15Q -2.0 V -0.7A TP2640LG TP2640N3 |
OCR Scan |
TP2640LG -350V -400V TP2635N3 TP2640N3 TP2635ND TP2640ND -300mA, -200mA | |
VP1304N2
Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
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OCR Scan |
2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2 | |
Contextual Info: TP2635 TP2640 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) ' d (ON) B V dgs (max) (max) (min) SO-8 TO-92 Diet -350V i5 n -2.0V -0.7A - TP2635N3 TP2635ND |
OCR Scan |
TP2635 TP2640 TP2640LG TP2635N3 TP2640N3 TP2635ND TP2640ND -350V -400V TP2635/TP2640 | |
A773* Transistor
Abstract: TP2635 TP2635LG TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND A773
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OCR Scan |
TP2635 TP2640 -350V TP2635LG TP2635N3 TP2635ND -400V TP2640LG TP2640N3 TP2640ND A773* Transistor TP2635ND TP2640 TP2640ND A773 | |
TO243AA
Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
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Original |
2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G TO243AA TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB | |
P2640
Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
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Original |
TP2640 DSFP-TP2640 A062609 P2640 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel | |
Contextual Info: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TP2640 General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown |
Original |
TP2640 DSFP-TP2640 B081613 | |
DN2540N5
Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
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Original |
2N7000 2N7002 2N7008 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5 DN2540N5 HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3 | |
Contextual Info: TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2635/TP2640 DSFP-TP2635 TP2640 C032807 | |
Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2640 DSFP-TP2640 A091608 | |
TP2635
Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
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Original |
TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND | |
Contextual Info: TP2635 TP2640 S u p e rte x inc. Low Thresh old Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R ds on BVdgs (max) (max) -350V 15Q -2.0V -400V 15Q -2.0V Order Number / Package !f b v dss / SO-8 TO-92 DICE* 0.7A TP2635LG TP2635N3 |
OCR Scan |
TP2635 TP2640 TP2635LG TP2640LG -350V -400V TP2635N3 TP2640N3 TP2635ND TP2640ND | |
7A, 100v fast recovery diode
Abstract: TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
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Original |
TP2635/TP2640 TP2635 TP2640 -350V TP2635N3 TP2635ND -400V TP2640LG TP2640N3 TP2640ND 7A, 100v fast recovery diode TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND | |
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Contextual Info: TP2635 TP2640 I_0W Threshold S iM fM C rtG X in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) SO-8 TO-92 Diet -350V 15& -2.0V -0.7A - TP2635N3 — -400V |
OCR Scan |
TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND TP2635/TP2640 | |
Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2640 DSFP-TP2640 A042709 | |
a1026
Abstract: TP2640N3-G
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Original |
TP2640 MS-012, TP2640 DSFP-TP2640 A102607 a1026 TP2640N3-G | |
TP2635
Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
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Original |
TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND | |
TP2635
Abstract: TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
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Original |
TP2635 TP2640 -350V TP2635N3 TP2635ND -400V TP2640LG TP2640N3 TP2640ND 678pF TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND | |
Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
Original |
TP2640 DSFP-TP2640 A062609 | |
HV50530PG
Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
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Original |
2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G HV50530PG hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3 |