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    TPC6104 Price and Stock

    Toshiba America Electronic Components TPC6104(TE85L,F,M)

    MOSFET P-CH 20V 5.5A VS-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TPC6104(TE85L,F,M) Reel
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    Toshiba America Electronic Components TPC6104(T5L,A,F)

    TPC6104(T5L,A,F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical TPC6104(T5L,A,F) 87,000 1,526
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    Rochester Electronics TPC6104(T5L,A,F) 87,000 1
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    • 100 $0.2174
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    Toshiba America Electronic Components TPC6104

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    Bristol Electronics TPC6104 8,708
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    Toshiba America Electronic Components TPC6104TE85LF

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    Bristol Electronics TPC6104TE85LF 8,708
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    TPC6104 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPC6104 Toshiba Pch Power MOSFET; Surface Mount Type: N; Package: VS-6; R DS On (max 0.12) (max 0.06) (max 0.04); I_S (A): (max -4.5) Original PDF
    TPC6104 Toshiba power MOSFET Original PDF
    TPC6104 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC6104(TE85L) Toshiba Transistor Mosfet P-CH 20V 5.5A T/R Original PDF
    TPC6104(TE85L:F) Toshiba Transistor Mosfet P-CH 20V 5.5A T/R Original PDF
    TPC6104(TE85L,F,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A VS6 2-3T1A Original PDF

    TPC6104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPC6104

    Abstract: W300B
    Text: TPC6104 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPC6104 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 33 mΩ (標準)


    Original     		PDF TPC6104 TPC6104 W300B

    TPC6104

    Abstract: No abstract text available
    Text: TPC6104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC6104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) · High forward transfer admittance: |Yfs| = 12 S (typ.)


    Original     		PDF TPC6104 TPC6104

    TPC6104

    Abstract: No abstract text available
    Text: TPC6104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC6104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • High forward transfer admittance: |Yfs| = 12 S (typ.)


    Original     		PDF TPC6104 TPC6104

    TPC6104

    Abstract: No abstract text available
    Text: TPC6104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC6104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • High forward transfer admittance: |Yfs| = 12 S (typ.)


    Original     		PDF TPC6104 TPC6104

    Untitled

    Abstract: No abstract text available
    Text: TPC6104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC6104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • High forward transfer admittance: |Yfs| = 12 S (typ.)


    Original     		PDF TPC6104

    Untitled

    Abstract: No abstract text available
    Text: TPC6104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC6104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • High forward transfer admittance: |Yfs| = 12 S (typ.)


    Original     		PDF TPC6104

    TPC6104

    Abstract: No abstract text available
    Text: TPC6104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC6104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • High forward transfer admittance: |Yfs| = 12 S (typ.)


    Original     		PDF TPC6104 TPC6104

    Untitled

    Abstract: No abstract text available
    Text: TPC6104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC6104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) • High forward transfer admittance: |Yfs| = 12 S (typ.)


    Original     		PDF TPC6104

    tpc8107

    Abstract: tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002
    Text: Power MOSFETs TPC Series PRODUCT GUIDE Toshiba Power Compact Series devices have been developed for use in high-speed switching applications and in various interfaces. Toshiba has developed this high-efficiency low ON-resistance series using processes specially formulated to ensure that the devices can be used in


    Original     		PDF 3525C-0209 tpc8107 tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    d5024

    Abstract: B1DHDC000028 1R154 MA2J72900L LE80536 R1112N331B-TR-FA K1KA02BA0014 NC131 Q13MC3061000414 B1CFMC000008
    Text: CF-Y4 Schematic Diagram Main 1 DOTHAN HOST BUS VC15 1 VCPUCORE E7 E9 C46 10u 6.3V C41 10u 6.3V C35 10u 6.3V C30 10u 6.3V C24 10u 6.3V C20 10u 6.3V C16 10u 6.3V C12 10u 6.3V 2 C7 10u 6.3V C3 10u 6.3V E17 E19 E21 F6 F8 GND F18 F20 F22 C47 10u 6.3V C42 10u 6.3V


    Original     		PDF FDS6690A NBNP006 B1DBGD000006 SENSE27 UNR9214J0L 1500p IC613 C0DBDJH00009 LTC4008EGN d5024 B1DHDC000028 1R154 MA2J72900L LE80536 R1112N331B-TR-FA K1KA02BA0014 NC131 Q13MC3061000414 B1CFMC000008

    tps51620

    Abstract: fds8884 tps51125 Inventec MPLC0730 AM4825P r5c804 TP889 hp d530 crb tps51125 kbc
    Text: www.laptop-schematics.com INVENTEC Preliminary Test 2008/03/25 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Preliminary Test SIZE CODE A3 CS DOC. NUMBER REV


    Original     		PDF IEC951098 1-Nov-2007 tps51620 fds8884 tps51125 Inventec MPLC0730 AM4825P r5c804 TP889 hp d530 crb tps51125 kbc

    tps51620

    Abstract: alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884
    Text: www.kythuatvitinh.com KiliManjaro CS Build A02 2008.02.04 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.29 17:18:29 +07'00' EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX


    Original     		PDF 23-Oct-2007 tps51620 alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884

    TI_BQ24721C_QFN_32P

    Abstract: D5036 tps51620 PowerPAD20 AM4825P tps51125 R1019 FM ic GMT_G680LT1_SOT23_5P pt10s TPS51620RHAR
    Text: INVENTEC PRELIMINARY TEST 07A99 2007 12 20 Pre-MP BUILD INVENTEC TITLE 07A99 Preliminary Test SIZE CODE A3 CHANGE by KOBE 23-Jan-2008 DOC. NUMBER REV X01 CS SHEET 1 OF 63 TABLE OF CONTENTS PAGE 1.COVER PAGE 2.INDEX 3.BLOCK DIAGRAM 4.POWER SEQUENCE BLOCK 5-12.SYSTEM POWER


    Original     		PDF 07A99 23-Jan-2008 R9033 R9034 AZ1015 C9038 C9040 R9039 TI_BQ24721C_QFN_32P D5036 tps51620 PowerPAD20 AM4825P tps51125 R1019 FM ic GMT_G680LT1_SOT23_5P pt10s TPS51620RHAR

    TI_BQ24721C_QFN_32P

    Abstract: tps51620 INVENTEC 4250T PCMB0603T PCI7412 BQ24721C bq24721 ddr3_sodimm0 ich9
    Text: CARLISLE CS3 Bulid PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 PAGE PAGE TABLE OF CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM DC & BATTERY CHARGER SYSTEM POWER +V3A / +V5A SYSTEM POWER (+VGFX_CORE) CPU POWER (+VCC_CORE)


    Original     		PDF SW600 SW601 14-Apr-2008 6050A2174701 TI_BQ24721C_QFN_32P tps51620 INVENTEC 4250T PCMB0603T PCI7412 BQ24721C bq24721 ddr3_sodimm0 ich9

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    tpc8118

    Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
    Text: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ


    Original     		PDF TPCM8001-H TPCM8003-H TPCM8002-H 2Q/2007 TPCM8102 1Q/2007 tpc8118 SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    K72 V3

    Abstract: transistor bipolar k72 transistor k72 x5 transistor k72 t8 D5024 k72 v6 transistor k72 v6 k104 transistor grease k67 transistor k79
    Text: ORDER NO. CPD0512063C1 Personal Computer CF-Y4 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-Y4HWPZZ 1 2 1: Operation System B: Microsoft Windows® XP Professional 2: Area M: Refer to above area table 2005 Matsushita Electric Industrial Co., Ltd. All rights reserved.


    Original     		PDF CPD0512063C1 EN60825 IC613 C0DBDJH00009 LTC4008EGN JS606 JS609 B1CFGD000004 2SK3019TL K72 V3 transistor bipolar k72 transistor k72 x5 transistor k72 t8 D5024 k72 v6 transistor k72 v6 k104 transistor grease k67 transistor k79

    ITE8502E

    Abstract: ITE8502E-L RTM875T-606 TPS51610 IT8502E ISL6251 INVENTEC ITE8502 alc269 SOT223 w27
    Text: 5 4 3 2 1 D D ACER C C BAP41/BAP51/SJM52 UMA+Discrete SW Gfx MAIN BOARD B B 2009.04.23 A A EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE Thursday, April 23, 2009 DATE CHANGE NO. 5 SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX X01 REV 4 3 2 TITLE INVENTEC


    Original     		PDF BAP41/BAP51/SJM52 BAP41/BAP51 D-CS-1310A2264501-ALG 11CONFIG R1001 -1/16W-0402 R1002 -1/16W-0402 CN1001 CLK32 ITE8502E ITE8502E-L RTM875T-606 TPS51610 IT8502E ISL6251 INVENTEC ITE8502 alc269 SOT223 w27

    TPC61Q4

    Abstract: No abstract text available
    Text: TOSHIBA TPC61Q4 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U— MOSIH TPC6104 NOTE BOOK PC APPLICATIONS PORTABLE EQUIPMENTS APPLICATIONS UNIT:mm •Low Drain - Source ON Resistance : R DS(ON):=33mQ(Typ.) •High Forward Transfer Admittance : |Y f s |=12 S(Typ.)


    OCR Scan     		PDF TPC61Q4 TPC6104 -10/zA TPC61Q4