TSB71020 Search Results

Contextual Info: MICROSEMI CORP/POQIER 27E D • bllSìSG Q00G532 1 « P T C T - 33-/3 TSB71020 I*TC TECHNOLOGY Power Transistor Chip, NPN 10 A, 200 V, tf = 35ns ■ Planar Epitaxial ■ C ontact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils

ptc Ni 1000

Abstract: 5609 transistor TSB71020
Contextual Info: 4SE P • bllSTSO OODDSbH Eìb « P T C mcROSErii c o r p / p o w e r T '3?-/3 TSB71020 Power TVansistor Chip, NPN 10 A, 200 V,tf = 35ns ■ Planar Epitaxial I Contact M etallization: ■ C hip Thickness: 22 mils Base and Em itter-Alum inum Collector A u o r Ti/N i/Ag