TSF10U60C Search Results
TSF10U60C Price and Stock
Taiwan Semiconductor TSF10U60CDIODE ARR SCHOTT 60V 5A ITO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSF10U60C | Tube | 4 | 1 |
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TSF10U60C | Tube | 111 Weeks | 1,000 |
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TSF10U60C Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| TSF10U60C |
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DIODE ARRAY SCHOTT 60V ITO220AB | Original | 489.05KB | 5 | |||
| TSF10U60C C0G |
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Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 60V ITO220AB | Original | 199.93KB |
TSF10U60C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Preliminary TSF10U60C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package |
Original |
ITO-220AB TSF10U60C JESD22-B102D ITO-220AB 2002/95/EC 2002/96/EC TSF10100C | |
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Contextual Info: TSF10U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and |
Original |
TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408024 | |
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Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 | |
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Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 | |
|
Contextual Info: TSF10U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and |
Original |
TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 | |
|
Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311017 | |
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Contextual Info: TSF10U45C thru TSF10U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
TSF10U45C TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401030 |