TSM1N50 Search Results

Contextual Info: s TAIWAN TSM1N50 SEMICONDUCTOR 500V N-Channel Power MOSFET bl RoHS C O M P L IA N C E PRODUCT SUMMARY Pin D efinition; 1. G ate 2. Drain 3. S ou rce Vos V RüS(on){ß) 500 5.5 @ V«s =10V Id (A) 0.5 1 23 General Description The TSM1N50 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

1N50

Abstract: TSM1N50CT marking 1N50 TAIWAN SEMICONDUCTOR
Contextual Info: $ TAIWAN TSM1N50 SEMICONDUCTOR 500V N-Channel Power MOSFET b RoHS CO M PLIANCE TO -92 Pin Definition; 1. Gate 2. Drain 3. Source PRO DUCT SU M M ARY V o s V ) R o S (o n ){ß ) Id ( A ) 500 5 .5 @ VÖS= 1 0 V 0.5 1 23 General Description The TSM1N50 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

BA-20 diode

Abstract: D 92 M - 03 DIODE high power diode 500v 1N50 1N50C p channel mosfet 100v 2A 500V MOSFET TSM1N50 TAG TO-92 500v 2A mosfet
Contextual Info: $ TAIW AN TSM1N50 SEMICONDUCTOR 500V N-Channel Power MOSFET pb RoHS CO M PLIANCE PRODUCT SUMMARY Pin Definition; 1. Gate 2. Drain 3. Source Vos (V) R ü S (o n ){ß ) 500 5.5 @ V«S=10V Id (A) 0.5 1 23 General Description The T S M 1N 5 0 is used an advanced term ination schem e to provide enhanced voltage-blocking capability w itho ut