TSM3481 Search Results

TSM3481

Contextual Info: TSM3481 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 48 @ VGS = -10V -5.3 79 @ VGS = -4.5V -4.1 Block Diagram ● Advance Trench Process Technology

2U52

Abstract: 3481C
Contextual Info: TAIW AN s TSM3481 SEMICONDUCTOR 30V P-Channe! MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source R Ds on)(m Q ) b (A) 48 @ V CS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V ) -30

M3481

Abstract: TSM3481CX6
Contextual Info: E TAIWAN TSM3481 S E M IC O N D U C T O R 30V P-Channei MOSFET pb RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source S54 R Ds(on)(m Q ) b (A) 48 @ VCS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V )

Contextual Info: TSM3481 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 48 @ VGS = -10V -5.3 79 @ VGS = -4.5V -4.1 Block Diagram ● Advance Trench Process Technology

2A52

Contextual Info: TAIWAN SEMICONDUCTOR s TSM3481 3ÛV P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 65 4 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source R Ds cn (m Q ) b (A) 48 @ V CS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V )