TT70S7Ô Search Results

Contextual Info: Silicon rectifier diodes BYY57A /BYY58A FEATURES • Forward current 50 A • Reverse voltage 75 V - 800 V • hermetic press-fit package • Available in different modifications of the package APPLICATIONS • Rectifying in car generators • Power supplies

ca 361 e ic

Contextual Info: PNP SILICON PLANAR POWER TRANSISTOR ZBD957 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * * * Fast switching Guaranteed hFE specified up to 1 A m p L o w collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Collector-Base Voltage

VQC10

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 IS SU E 2 - SEPTEM BER 1995 FEA TU RES * 2A CONTINUOUS CURRENT * FA ST SW ITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COM PLEM ENTARY TYPE - FZT604 PART MARKING D ETAIL FZT704 •= ABSOLUTE MAXIMUM RATINGS.

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6726 2N6727 ISSUE 1 - MARCH 94_ FEATURES * 40 Volt V,CEO Gain of 50 at lc = 1 Amp P,0,=1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6726 2N6727 UNIT Collector-Base Voltage

ZTX502

Abstract: BC212 BC307 BC556A BC556B BC557A BCY77A BCY77B BCY77C ZTX504
Contextual Info: SbE ]> • TT70S7Ô GDG70MÛ 275 B Z E T B SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS IcBO V CE|sat| c at lc Max. ■b fr CoBO Min. Max. I at < V CEO Min. Min. Max. at VCB o m V cbo Dice type Volts Volts nA Volts Min. Max. mA Volts Volts mA mA MHz Chip

Contextual Info: ZE TE X INC TS D • TT70S7Ô 000b13^ 1 ■ 95D 0 6 1 3 9 D m 7 zS h io -fo ZN503A J ZN504CJ ZIM504E 10-bit microprocessor compatible A -D converter A D V A N C E PRODUCT INFORMATION FEATURES DESCRIPTION • No missing codes over full temperature range at appropriate accuracy

4x500

Contextual Info: 15 ZE TE X INC TT7057Ö G0Gb035 0 95 D 0 6 0 3 5 / *“5 V * '/ 0 - 6 7 6-bit video A-D converter ZN440 ZN441 FEATURES 1 6 M H z sam ple rate - Z N 4 4 0 6-bit resolution Expandable to 7 or 8 bits ± 'h L S B linearity N o sam ple and hold required U nipolar or bipolar analogue input

Contextual Info: Ti7DS7fl GGa?ÔÔS 4TT bOE D ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP0120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: 4.0V LOW POWER PRECISION REFERENCE SOURCE ZRT040 ISSU E 1 - OCTOBER 1995 DEVICE DESCRIPTION FEATURES The ZRT040 is a monolithic integrated circuit providing a precise stable reference voltage of 4.01V at 500pA. • Trimmable output The circuit features a knee current of 150nA and

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 2 -J U N E 94_ FEATURES * 60 Volt V DS * R D S o n = 1 i i ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Drain-Source Voltage (/) a > UNIT 60 V 600 mA 'd m 8 A V GS ±20 V ^tot 0.7