TAMTP25 Search Results

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -MARCH 1996 O PARTMARKING DETAIL -S S _ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS Continuous Drain Current at Tamtp25°C VALUE UNIT 50 V *D 200 mA Pulsed Drain Current

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 60 Volt V DS * R DS on = 2 £ i ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current at Tamtp25°C VALUE UNIT V DS 60

ZVN4306A

Abstract: so25
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - M ARCH 94_ FEATURES * 100 Volt v DS * R DS!on = 1 -5 Q * Spice model available ABSOLUTE MAXIMUM RATINGS. SYMBOL > VALUE CO o PARAMETER Drain-Source Voltage Continuous Drain Current at Tamtp25°C

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 200 Volt V DS * fW r io n * Low threshold APPLICATIONS * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamtp25°C

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 350 V olt VDS * RDS<onf100ß ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS -350 V Continuous Drain Current at Tamtp25°C •d -50 mA Pulsed Drain Current

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET o FEATURES: * VDS - 200V * n •. ^DS ON ‘ 10ÎÎ w PARTMARKING DETAIL - ZVN2120 K s s D Q ABSOLUTE MAXIMUM RATINGS. VALUE UNIT PARAMETER SYMBOL Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamtp25°C

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JU L Y 94_ FEATURES * 60 Volt V,DS ^DS on - 0 ,3 3 fl Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive ABSOLUTE MAXIMUM RATINGS. PARAMETER

ZRT062

Contextual Info: 6.2V LOW POWER PRECISION REFERENCE SOURCE ZRT062 ISSUE 1 - OCTOBER 1995 FEATURES DEVICE DESCRIPTION • The ZRT062 is a m onolithic integrated circuit providing a precise stable reference voltage of 6.17V at 500mA. • Excellent temperature stability • Low output noise figure

FCX596

Abstract: FMMT596
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR Issue 4 - November 2006 FCX596 PARTMARKING DETAIL- P96 B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VcB O -220 V Collector-Emitter Voltage V CEO -200 V Emitter-Base Voltage V ebo -5 V Peak Pulse Current

Contextual Info: ADJUSTABLE PRECISION ZENER SHUNT REGULATOR ZR431C ISSUE 1 - FEB 94_ FEATURES * A ve ra g e te m p e ra tu re co e ffic ie n t 50 ppm /°C * T e m p e ra tu re c o m p e n sa te d fo r o p e ra tio n o v e r th e fu ll te m p e ra tu re range

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -JANUARY 1996 O C O M P L E M E N T A R Y TY PE - BFN19 P A R T M A R K IN G D ET A IL - DE ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage

ZTX758

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ISSUE 1 - APRIL 94_ _ FEATURES * 400 Volt VCE0 * 0.5 Am p continuous current * Ptot= 1W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO

2TX750

Abstract: VCS-60V ZTX750 ZTX751 ZTX752 ZTX753
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IS S U E 2 - J U L Y 94_ FEATURES * 60 Volt V,CEO 2 A m p continuous current Lo w saturation voltage P ,o t = 1 W a t t ABSOLUTE M A X IM U M RATINGS. ZTX750 ZTX751 UNIT V CB0 -60 -80 V

T018

Abstract: ZRT025 avr SCHEMATIC circuit diagram
Contextual Info: 2.5V LOW POWER PRECISION REFERENCE SOURCE ZRT025 ISSU E 1 - OCTOBER 1995 DEVICE DESCRIPTION FEATURES The ZRT025 is a monolithic integrated circuit providing a precise stable reference voltage of 2.5V at 500|jA • The circuit featu res a knee current of 150pA and

Contextual Info: SUPPLY VOLTAGE MONITOR ZSM560 ISSUE 2 - NOVEMBER 1995_ DEVICE DESCRIPTION FEATURES The ZSM560 is a three terminal under voltage monitor circuit fo r use in m icroprocessor systems. The threshold voltage of the device has been set to 4.6 volts making it ideal for 5

Contextual Info: SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS FMMTA63 FMMTA64 ISSUE 2 - MARCH 1995_ O PAR TM ARKING DETAIL - F M M TA 63 - Z2U F M M TA 64 - Z2V C O M PLEM ENTARY TYPES - F M M TA 63 - FM M TA 13 F M M TA 64 - F M M TA 14 ABSOLUTE MAXIMUM RATINGS.

ZTX756

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSUE 2 -J U L Y 94 FEATURES * 300 Volt V,CEO 0.5 Am p continuous current P,0,= 1 W att E-Une T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

Contextual Info: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ZR423 ISSUE 1 - FEBRUARY 1996 DEVICE DESCRIPTION FEATURES The ZR423 uses a bandgap circuit design to a ch ieve a pre cisio n m icro p o w e r voltag e reference of 1.25 volts. The device is available in a T 09 2 style package for through hole

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4106F ISSUE 2 - DECEMBER 1995 !- PARMARKING DETAIL - MZ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V qs 60 V C ontinuous Drain Current at Tamtf=250C

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 -SEPTEMBER 1995 O PARTMARKING DETAIL— SP ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT -50 V mA mA Continuous Drain Current •d -130 Pulsed Drain Current

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 OCTOBER 1995_ O_ FEATURES * 150 Volt VCE0 * 1 A m p continuous current P A R T M A R K IN G D E T A IL - N95 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L VALUE UNIT VCBO 170 V Collector-Emltter Voltage

ztx550

Abstract: ZTX551
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94_ FEATURES * 60 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t * Ptot= 1 W a tt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO -60 -80 C ollector-Em itter Voltage

Contextual Info: SOT23 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR ISSU E 3 - NOVEMBER 1995 FMMT494 O ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage V CBO 140 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage V EBQ 5 V Continuous Collector Current