FCHS10A08
Abstract: newave power MARK WF RF
Text: x y — b '^ y 10A 80V Tjw150V SB D Fully Molded similar to TO-220AB Cathode common FC H S 10A 08 tü fft Nihon Inter Electronics Corporation Specification '> 3 -y h Construction y T y 4 y f- K Schottky Barrier Diode if! ill Application High Frequency Rectification
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80VTjw150V
-220AB
FCHS10A08
UL94V-0ISSPPP)
UL94V-0
newave power
MARK WF RF
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FSQS15A045
Abstract: 118T
Text: 15A 45V Tjw150V Fully Molded simitar to TO-220 FSQ S15A 045 tti* * Nihon Inter Electronics Corporation Specification -y h yT Schottky B arrier Diode Application H igh Frequency Rectification • I K Construction MAXIMUM RATINGS Ta=25°C: U nless otherw ise specified
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Tjw150V
O-220
FSQS15A045
/l-50Hz
FSQS15Ar
UL94V-0
118T
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ci 4502
Abstract: ECT180
Text: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified
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35VTjw150V
FSQS04A035
50HzIESmffiKftÃ
FSQS04A035
20mVrms
100kHz
UL94V-0
ci 4502
ECT180
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FCHS20A
Abstract: WH 1602 K FCHS20A045 RECT18
Text: 20A 45V Tjw150V Fully Molded similar to TO-220AB FCHS20A045 0 * ^ Nihon Inter Electronics Corporation Specification «5t 'y 3 y h Construction ff lii Application J iy Ç /iË fê y r^V K Schottky Barrier Diode rWijRliiSSIifliiffl High Frequency Rectification
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OCR Scan
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Tjw150V
O-220AB
FCHS20A045
20mVRMs
100kHz
FCHS20A045
FCHS20Ar
UL94V-0m
UL94V-0
FCHS20A
WH 1602 K
RECT18
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10a45
Abstract: marking WMM
Text: S BD Anode camman 10A 45V Tjw150V FRQS10A045 Fully Molded sim ilar to TO-22QAB ttíf# 0 * ^ Nihon Inter Electronics Corporation Specification. mm ^ Construction '> 3 y Schottky Barrier Diode Application High FVequenty Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified
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OCR Scan
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Tjw150V
TQ-220AB
FRQS10A045
FRQS10A045
20mVRMs
100kHz
UL94V-0ISÂ
UL94V-0
10a45
marking WMM
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FCQS30A045
Abstract: No abstract text available
Text: 30A 45V Tjw150V # y — h '= i* y SBD Fully Molded similar to TO-22QAB Cathode common FC Q S30A045 tt ti* Nihon Inter Electronics Corporation Specification ' > h -y h y T Hr— K Construction Schottky B arrier Diode Application H igh Frequency Rectification
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OCR Scan
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PDF
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Tjw150V
O-22QAB
FCQS30A045
1181C
FCQS30Ar
UL94V-0I
UL94V-0
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FCHS30A08
Abstract: FCHS30A Diode Marking WA
Text: 30A 80V Tjw150V Fully Molded sim ilar lo FCHS30A08 ft* * TO-220AB Nihon Inter Electronics Corporation Specification 'y 3 -y V Construction f f lìÉ Application y T ^ Schottky B arrier Diode iWjJr I H igh Frequency' Rectification MAXIMUM RATINGS T a= 2 5 °C U nless otherw ise specified
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OCR Scan
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80VTjw150V
T0-220AB
FCHS30A08
20mVRMs
100kHz
FCHS30A08
FCHS30Ar
UL94V-OgÂ
UL94V-0
FCHS30A
Diode Marking WA
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fcqs10a045
Abstract: 10a45 IMTIA
Text: SBD Cathode common 10A 45V Tjw150V Fully Molded similar to TO-22QAB FCQS10A045 Nihon Inter Electronics Corporation Specification. mm Construction v ' s y h y 7 y j Schottky B arrier Diode Application H igh Frequency Rectification k MAXIMUM RATINGS T a = 25°C U nless otherw ise specified
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10A45VTjw150t
TQ-220AB
FCQS10A045
UL94V-0
10a45
IMTIA
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FRQS20A045
Abstract: UL94V-01
Text: SBD Anode common 20A 45V Tjw150V Fully Molded similar to TO-22QAB FRQS20A045 tttiS Nihon Inter Electronics Corporation Specification '> 3 '7 h y r yj Construction Schottky Barrier Diode Application High Frequency Rectification • k MAXIMUM RATINGS Ta = 25°C Unless otherwise specified
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OCR Scan
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45VTjw150V
O-22QAB
FRQS20A045
FRQS20Ar
UL94V-01ggpÂ
UL94V-0
UL94V-01
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4A80
Abstract: No abstract text available
Text: 4A 80V Tjw150V Fully Molded similar to TO-220AC h FSHS04A08 tbfl* 0 * ^ tts tè tt Nihon Inter Electronics Corporation Specification ^ y 7 ¥ 4 Construction Schottky Barrier Diode Application High Frequency Rectification B K I MAXIMUM RATINGS Ta=25°C Unless otherwise specified
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4A80VTm150V
T0-220AC
FSHS04A08
FSHS04Ar
UL94V-0
4A80
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FCQS20A045
Abstract: FCQS20
Text: 20A 45V Tjw150V 2 y — h' = • ¥ > - SBD Fully Molded similar to TO-22QAB Cathode mmmon FCQS20A045 tttf* Nihon Inter Electronics Corporation Specification Construction '> 3 y h y 7 Schottky Barrier Diode Application High Frequency Rectification M cxm z h- K
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20A45VTÂ
TQ-220AB
FCQS20A045
FCQS20Ar
UL94V-0
FCQS20
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FSQS05A045
Abstract: IBT 1/2 20M
Text: Fully Molded sim ilar to TO-220AC 'n irfrn Z ï h 5A 45V Tjw150V FSQ S05A045 ttti* Nihon Inter Electronics Corporation Specification. Construction ffljÉ Application H a y h y r Schottky Barrier Diode k High Frequency Rectification MAXIMUM RATINGS Ta=25‘C: Unless otherwise specified
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5A45VTÂ
O-22QAC
FSQS05A045
20mVRMS
100kHz
FSQS05A045
FSQS05Arj
UL94V-0
IBT 1/2 20M
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