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    UPB1001B Search Results

    UPB1001B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPB1001B Cree 1W, 1GHz, 26V Broadband RF Power NPN Bipolar Transistor Original PDF

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    J552

    Abstract: J3510 j528 ultrarf J5-28 UPB1001B J418 J351
    Text: URFDB Sec 03_1001B 11/3/99 10:17 AM Page 3-1 UPB1001B 1W, 1GHz, 26V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 1W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF 1001B UPB1001B 30dBc 140mA 100oC 175oC J552 J3510 j528 ultrarf J5-28 UPB1001B J418 J351