UPC2762T Search Results

SOT-363* marking c1z

Contextual Info: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER UPC2763TB GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA FEATURES • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T 20 UPC2763T Gain, GS (dB)

2763-T

Contextual Info: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES_ UPC2762T UPC2763T GAIN vs. FREQUENCY • 7 dBm PidB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)

IC 431

Abstract: 567 tone NEC C 324 C 302 zl IC 567 transistor outline package 3 567 ic UPC2762T UPC2762TB UPC2762TB-E3
Contextual Info: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER FEATURES INSERTION POWER GAIN vs. FREQUENCY AND TEMPERATURE • WIDE BANDWIDTH: 2.9 GHz at -3 dB • SUPER SMALL PACKAGE: SOT-363 package • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION

UPC2762T

Abstract: UPC2762T-E3 UPC2763T UPC2763T-E3 63T marking
Contextual Info: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T 20 UPC2763T Gain, GS (dB) • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)

PC2762

Contextual Info: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER UPC2763TB FEATURES_ GAIN vs. FREQUENCY • 7 dBm PidB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2762TB5juPC2763TB5juPC2771 TB 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS D ESC R IPTIO N The ,uPC2762TB, ,uPC2763TB and ,uPC2771TB are silicon monolithic integrated circuits designed as amplifier for

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2762TB 3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER FEATURES • HIGH P1dB: 7 dBm TYP at 1.9 GHz • LOW VOLTAGE: 3.0 V TYP, 2.7 V MIN • WIDE BANDWIDTH: 2.9 GHz at -3 dB • SUPER SMALL PACKAGE: SOT-363 package

UPC2762T

Abstract: UPC2762T-E3 UPC2763T UPC2763T-E3
Contextual Info: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T 20 UPC2763T Gain, GS (dB) • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)

Contextual Info: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 27 mA 7 d B m PidB T Y P IC A L A T 1.9 GHz LO W V O LT A G E : 3 Volts W ID E BAN D W ID T H : 2.9 GHz at -3 dB UPC2762T HIGH G AIN : 20 dB at 1.9 GHz (UPC2763T)

UPC2762T

Abstract: UPC2762TB UPC2762TB-E3-A
Contextual Info: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER FEATURES INSERTION POWER GAIN vs. FREQUENCY AND TEMPERATURE • WIDE BANDWIDTH: 2.9 GHz at -3 dB • SUPER SMALL PACKAGE: SOT-363 package • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION

63T marking

Contextual Info: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES_ UPC2762T UPC2763T GAIN vs. FREQUENCY • 7 dBm PidB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)

t06 93

Contextual Info: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T G AIN vs. FREQUENCY Vcc = 3.0 V, Icc = 27 mA 7 dBm PidB TYPICAL AT 1.9 GHz LOW VOLTAGE: 3 Volts W IDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T) SUPER SMALL PACKAGE

Contextual Info: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER UPC2763TB GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 27 mA FEATURES_ • 7 dBm PidB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • W IDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PC3239TB-E3

Abstract: PC3239TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3239TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3239TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

NEC MARKING

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2762T, jUPC2763T 3V-BIAS, MEDIUM-POWER HIGH-FREQUENCY SiMMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION ¿¡PC2762T and ¿¡PC2763T are silicon m onolithic integrated circuits designed for the transm ission TX stage

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan