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    VM3200 Search Results

    VM3200 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    SIT5001AC-3E-33VM-32.000000 SiTime 1 to 80 MHz, ±5 ppm (VC)TCXO Datasheet
    SF Impression Pixel

    VM3200 Price and Stock

    SiTime Corporation SIT5001AC-3E-33VM-32.000000Y

    MEMS TCXO 32MHz 3.3V 5ppm 4-Pin Surface Mount T/R - Tape and Reel (Alt: SIT5001AC-3E-33VM-)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT5001AC-3E-33VM-32.000000Y Reel 16 Weeks 3,000
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    • 10000 $4.40626
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    VM3200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bp-930

    Abstract: grundig vs-c45 np-120 li-ion EPSON DX7 sanyo vm-d6p sony F570 toshiba c660 AA NiMh battery 1.2v 2000mAh np-60 casio cv-3010
    Text: Digital Camera Battery Picture Index & Specifications Model # Information Model # DLC1L DLCRV3 Description: • Replaces Canon NB-1L • 3.7Volt 680mAh 420 images • NoMEM Lithium-Ion • 3 Year Warranty Dimensions: 1-15/16 x 2-1/4 x 3/8 Description: • Replaces Casio NP-20


    Original
    PDF 680mAh NP-20 650mAh 850mAh DLCS40 1230mAh 600mAh SPP04 SPP03 bp-930 grundig vs-c45 np-120 li-ion EPSON DX7 sanyo vm-d6p sony F570 toshiba c660 AA NiMh battery 1.2v 2000mAh np-60 casio cv-3010

    Untitled

    Abstract: No abstract text available
    Text: VM3200 * T C In c . u T r V'a/ue f/i Customer" 2 OR 4-CHANNEL, 3.3 TO 5-VOLT, TWO-TERMINAL, THIN-FILM/MIG HEAD, READ/WRITE PREAMPLIFIER August. 1995 • • • • • • • • High Performance - Read Gain = 300, 200 or 150 V/V - Input Noise = 0.48nV/VHz Typical


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    PDF VM3200 48nV/VHz 100mV, 10MHz

    Untitled

    Abstract: No abstract text available
    Text: MAY s ; VM3200 VTC Inc. 3.3-VOLT, TWO-TERMINAL, THIN-FILM MIG HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY CONNECTION DIAGRAMS FEATURES • High Performance - Read Gain = 300, 200 oM 50 V/V - Input Noise = 0.55nV/VHz Typical - Head Inductance Range = 0 . 2 - 5 pH


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    PDF VM3200 55nV/VHz

    Untitled

    Abstract: No abstract text available
    Text: # H vtc.„c Value the C ustom er VM3200 2 OR 4-CHANNEL, 3.3 TO 5-VOLT, TWO-TERMINAL, THIN-FILM/MIG HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEA TU RES • • • • • • • D ESCR IPTIO N The V M 3200 is a high-perform ance, very low-power read/


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    PDF VM3200 100mV, 10MHz

    VM723430

    Abstract: No abstract text available
    Text: VM 5252015FC Y IS iK - 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER WITH SERVO WRITE _ ADVANCE INFORMA TION D E S C R IP T IO N The VM5252015FC is a high-performance, integrated read/ write preamplifier designed for use with two-terminal, thin-film


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    PDF 5252015FC 20-CHANNEL, VM5252015FC VM7646 VM7750F VM7800 10-Channel, VM782020 VM723430

    Untitled

    Abstract: No abstract text available
    Text: April 1994 PRELIMINARY % M icro Linear ML6320 3V/5V 4-Channel Thin-Film Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML6320 is a BiCMOS monolithic read/write circuit designed for use with two-terminal recording heads, in the next generation disk drives operating on 3V supplies. In


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    PDF ML6320 ML6320CR-3 ML6320CS-5 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: #T4 ^ I f V A | H A Value the Customer V M 3 2 0 0 2 OR 4-CHANNEL, 3 TO 5-VOLT, TWO-TERMINAL, THIN-FILM/MIG HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY_ FEATURES • GND CZ hox m HOY 1= H1X CZ H1Y CZ H2X CZ H2Y CZ H3X CZ H3Y CZ VCC IZZ 20 1


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    PDF 48nV/VHz 10MHz 100mV,

    lw 293

    Abstract: No abstract text available
    Text: ## VM 3200 2 OR 4-CHANNEL, 3.3 TO 5-VOLT, TWO-TERMINAL, THIN-FILM/MIG HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEATURES • High Performance - Read Gain = 300, 200 or 150 V/V - Input Noise = 0.48nV/VHz Typical - Head Inductance Range = 0 . 2 - 5 nH - Write Current Range 2 - 2 5 mA


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    PDF 48nV/VHz VM3200 100mV, 10MHz lw 293

    CR910

    Abstract: No abstract text available
    Text: November 1996 3 ^ Micro Linear ML6320 3V/5V 4-Channel Thin-Film Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML6320 is a BiCMOS monolithic read/write circuit designed for use with two-terminal recording heads, in the next generation disk drives operating on 3V supplies. In


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    PDF ML6320 ML6320CR-3 ML6320CS-5 20-Pin CR910

    Untitled

    Abstract: No abstract text available
    Text: June 1996 PRELIMINARY MÄLMicro Linear ML6320 3V/5V 4-Channel Thin-Film Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML6320 is a BiCMOS monolithic read/write circuit designed for use with two-terminal recording heads, in the next generation disk drives operating on 3V supplies. In


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    PDF ML6320 ML6320 0b47A