VN0300 Search Results

vn0300m

Contextual Info: SILICONIX INC 1ÔE D • GG3j MG7 4 b ■ VN0300 SERIES f X S ilicon ix X V 3254735 in c o r p o r a te d N-Channet Enhancement-Mode MOS Transistors T -S q -o S PRODUCT SUMMARY PART NUMBER TQ-205AD TO-39 V(BR)DSS fDS(ON) < ii) (V) Id (A) PACKAGE VN0300B

Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d (ON) BVdgs (max) (min) TO-39 TO-92 30V 1 .2 0 . 1.0A V N 0 30 0B V N 0 30 0L Advanced DMOS Technology High Reliability Devices See pages 5 -4 and 5-5 fo r M ILIT A R Y S T A N D A R D P rocess Flows

Contextual Info: Supertex inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) b v dgs (max) (min) TO-92 30V 1.2& 1.0A VN0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows

VN0300M

Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
Contextual Info: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)

VN0300

Abstract: VN0300B VN0300L
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 30V 1.2Ω 1.0A VN0300B VN0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows

Contextual Info: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V

VN0300

Contextual Info: VN0300 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN0300 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: ^ Supertex inc. V N 0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices / Order Number / Package R d s ON ' d (ON) b v dgs (max) (min) TO-39 TO-92 30V 1.2£2 2.0A VN0300B VN0300L B V 0ss High Reliability Devices

Contextual Info: Tem ic siliC0Dl>_ TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber '' BR DSS M in (V) r DS(on) M ax (£2) y<3S(th) (V) I d (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V

sivn

Abstract: sivn fet
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN0300L

Abstract: tmos fet TO226AA
Contextual Info: VN0300L* MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Vd SS 60 V Drain-Gate Voltage Vd GR SO V Gate-Source Voltage — Continuous — Non-repetitive tD S 50 /¿s Vg S Vg s M ±20 ±40 Vdc Vpk Rating Continuous Drain Current Pulsed Drain Current

VN0300

Abstract: VN0300L
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 30V 1.2Ω 1.0A VN0300L TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

0401L

Abstract: TN0201L TN0401L VN0300L VN0300LS tn0201l siliconix
Contextual Info: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30

TN0201L

Abstract: TN0401L VN0300L VN0300M
Contextual Info: TN0201L/0401L, VN0300L/M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V

vn0300

Abstract: VN0300L VNDQ03
Contextual Info: VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (B R |D S S VN0300L VN0300M >D " s r (A) PACKAGE 30 1.2 0.64 TO-92 30 1.2 0.67 TO-237 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237 Performance Curves: VNDQ03

VN46AFD

Abstract: VNDQ1 vnd02 TD1001 VN46AF
Contextual Info: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)

vn0300

Abstract: TA 7159
Contextual Info: Supertex Inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S ON b tO N ) BVuos (max) (min) TO-92 30V i.2 n 1.0A VN0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows

VNDQ1CHP

Abstract: VN0300M VNDQ1 VN0300 VNDQ03 TN0201L TN0401L VN0300L VQ1001J VQ1001P
Contextual Info: ^CX Siliconix VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors -AmM incorporated TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) rDS(ON) (Ù) •d (A) PACKAGE VN0300L 30 1.2 0.64 TO-92 VN0300M 30 1.2 0.67 TO-237 1 SOURCE 2 GATE

SIVN0300L

Abstract: 0300l VN0300 0300L to92
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN0300

Abstract: VN0300L
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 30V 1.2Ω 1.0A VN0300L TO-92 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows

0401L

Abstract: VN0300L TN0401L TN0201L VN0300LS
Contextual Info: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30

25Q10

Contextual Info: TN0201 L/0401 L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V GS{«h)(V) b (A) TN0201L 20 1.2 @ V qs = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ V qs = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS= 10 V 0.8 to 2.5 0.64

0300L

Contextual Info: VN0300 LJ} Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON B V dqs (max) 30V 1.2£i If Standard Commercial Devices 1.0A Free from secondary breakdown Low pow er drive requirement □ E a s e of paralleling

Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities