VN1206 Search Results

Contextual Info: Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSs I R BVdgs 120V q S ON Order Number / Package '« O N ) (max) (min) TO-92 6.0Q 1.0A VN1206L Features Advanced DMOS Technology □ Free from secondary breakdown □

Contextual Info: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V (B R )D S S Min (V) 120 TD S (on) M a x ( Q ) VoS(th) (V) Id (A) 6 a vGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS • Low On-Resistance: 3.8 Q • Low Threshold: 1.4 V • Low Input Capacitance: 35 pF

Contextual Info: □ï SUPERTEX INC 1 7 07732^5 DOOlbSÖ h V N 1206 V N 1210 r- -if-os’ N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information Order Number / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L

VN1206M

Contextual Info: VN 1206 SERI ES N-Channel Enhancement-Mode MOS Transistors B'SSSSSS PRODUCT SUMMARY PART NUMBER V BRJDSS VN1206L VN1206M r DS(ON •d (A) (A) PACKAGE 120 6 0.23 TO-92 120 6 0.26 TO-237 3 DRAIN TO-237 BOTTOM VIEW Performance Curves: VNDQ12 Jet* 1 SOURCE 2 GATE

Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities

VNDQ1

Abstract: 1206L VN1206L
Contextual Info: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

VN1210M

Abstract: VN1206M VN1206L
Contextual Info: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M

VN1206L

Abstract: VN1210M VN1206M
Contextual Info: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M

Contextual Info: VN1206D Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)120 V(BR)GSS (V)30 I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)45 Minimum Operating Temp (øC)-55

VN1206

Contextual Info: VN1206 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN1206 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

VN1206

Abstract: vn1210
Contextual Info: VN1206 VN1210 in c . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss / ^D S O N I d i ON) b v dgs (max) (min) TO-39 TO-92 TO-220 120V 6n 1.0A VN1206B VN1206L VN1206D 120 V io n

vn1206

Contextual Info: S i I I m m m m tß iw itfu w i | r ZJ r Ï u . f VN1206 VN1210 Irir', » N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 VN1206B VN1206L VN1206D

1206L

Abstract: VN1206L
Contextual Info: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

VN1206

Abstract: VN1206L
Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 120V 6.0Ω 1.0A VN1206L TO-92 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: VN1206N1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)60Í I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)

sivn fet

Abstract: sivn
Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN1206L

Abstract: VN1206M VN1210M
Contextual Info: VN1206L/M, VN1210M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN1206L VN1206M 1 120 VN1210M rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V

vn1210m

Contextual Info: am & SS VNDQ12 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-237 • VN1206M, VN1210M Single TO-92 TO-226AA • VN1206L, VN1210L, TN1206L Single Chip • Available as VNDQ4CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive

Contextual Info: VN1206M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)120 V(BR)GSS (V)30 I(D) Max. (A).33 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)

1206L

Abstract: VN1206
Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN1206B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)120 V(BR)GSS (V)30 I(D) Max. (A)700m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6.3 Minimum Operating Temp (øC)-55

Contextual Info: T em ic smcons_ VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt Num ber : VV BR DSS Min (V) VN1206L VN1206M 120 VN1210M Features Benefits • • • • • • • • • • Low On-Resistance: 3.8 Q

Contextual Info: V N 1206 V N 1210 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B Vdss I Order Number / Package ^DS O N *D(0N> BV dgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L VN1206D 120 V 1 0 ÌÌ