VN241 Search Results

VN2410M

Abstract: VN2410L
Contextual Info: VN2410 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (Í1) (A) PACKAGE VN2410L 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 •d 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237

Siliconix TO-92S

Contextual Info: TN2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) TN2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 VN2410L 1 0 ® V qs = 1 0 V

VN2410

Contextual Info: VN2410 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN2410 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN2410L

Abstract: 70204 TN2410L VN2406D VN2406L VN2410LS
Contextual Info: TN2410L, VN2406D/E, VN2410L/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN2410L VN2406D rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V

Contextual Info: VN2410B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)240Í I(D) Max. (A)700m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)6.3 Minimum Operating Temp (øC)

Contextual Info: VN2406 VN2410 Super te x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information Order Number / Package BVDss I ^DS O N ' d (ON) bvms (max) (min) TO-92 240V 6.on 1.0A VN2406L 240V ion 1.0A VN2410L Features Advanced DMOS Technology □ Free from secondary breakdown

Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

VN2406D

Abstract: VN2410* mosfet TN2410L VN2406L VN2410L VN2410LS
Contextual Info: _ TN2410L, VN2406D/E, VN241 OL/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Num ber rDS on Max (£2) VGs(th) (V) I d (A) TN 2410L 10 @ V GS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ V GS = 1 0 V 0.8 to 2

2410L

Abstract: VN2410
Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN2410L

Abstract: IEC134
Contextual Info: bbS3T31 Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES □DEMDfl'ì T7D * A P X VN2410LN AnER philips/1>iscre:te N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO-92 variant

Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V

Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L YN2406D VN2410L VN2406L VN2410M VN2406M Product Summary P a rt N um ber r DS on M a x (Q ) V c s « h )(V ) I d (A ) TN2410L 10 @ V cs = 4.5V 0.5 to 1.8 0.18 VN2406D 6 @ VGs = 10 V

VN2410

Contextual Info: Supertex inc. VN2410 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN2410 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

VN2410M

Abstract: VN2410CHP VN2410 VN2410L
Contextual Info: TOPAZ SEM ICOND UCTOR OS E D | D D 0 1 1 D E fl | " : T-29-25 VM241Q SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE D-MOS FIT ORDERING INFORMATION Sorted Chips in Waffle Pack VN2410CHP TO-226AA TO-92 Plastic Package VN2410L TO-237 Plastic Package

VN2406

Abstract: 20W Solenoid Driver VN2406B VN2406D VN2406L VN2410 VN2410L
Contextual Info: VN2406 VN2410 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 TO-220 240V 6Ω 1.0A VN2406B VN2406L VN2406D 240V 10Ω 1.0A — VN2410L — Advanced DMOS Technology

VN2410

Abstract: VN2406 VN2406L VN2410L
Contextual Info: VN2406 VN2410 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 240V 6.0Ω 1.0A VN2406L 240V 10Ω 1.0A VN2410L TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown

Contextual Info: VN2410L* M A X IM U M R ATINGS Rating Symbol Value Unit VDSS 240 V Drain-Gate Voltage VDGR 60 V Gate-Source Voltage - Continuous —Non-repetitive tp s 50 ^ts Vg s V g SM ±20 ± 40 Vdc Vpk 'd 200 mA 'd m 500 mA PD 350 mW Drain-Source Voltage Continuous Drain Current

Contextual Info: VN2410L* CASE 29-04, STYLE 22 TO-92 TO-226AA M A X IM U M R A T IN G S Rating Symbol Value Unit Drain-S ource Voltage VDSS 60 V Drain-G ate Voltage V DGR 60 V VGS -4 0 V 'D 200 mA 'DM 500 mA pd 350 mW 2.8 mW.-’ C Gate*Source Voltage C ontinuous Drain Current

BC237

Abstract: VN2410L equivalent sot323 w2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2410L 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc Drain – Gate Voltage VDGR 60 Vdc Gate – Source Voltage

VN2406D

Abstract: vn2410 2406L 2410L TN2410L VN2406L VN2410L VN2410LS vishay siliconix code marking Siliconix TO-92S
Contextual Info: TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V 0.8 to 2

410L

Abstract: VN2410L VN2410LG VN2410LZL1 VN2410LZL1G marking VN2
Contextual Info: VN2410L Small Signal MOSFET 240 V, 200 mA, N−Channel TO−92 Features • Pb−Free Packages are Available* http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDSS 240 Vdc Drain −Gate Voltage VDGR 240 Vdc Gate −Source Voltage

Contextual Info: ^ Supertex inc. VN2406 VN2410 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV d ss / R d S ON (min) TO-39 TO-92 TO-220 240V 60 1.0A VN2406B VN2406L VN2406D 240V 10£i 1.0A — VN2410L — qgs Advanced DMOS Technology High Reliability Devices