VN4012 Search Results
VN4012 Price and Stock
Microchip Technology Inc VN4012L-GMOSFET N-CH 400V 160MA TO92-3 |
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VN4012L-G | Bag | 259 | 1 |
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VN4012L-G | Bag | 5 Weeks | 3,000 |
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VN4012L-G | 1,079 |
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VN4012L-G | 3,000 | 50 |
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VN4012L-G | Bulk | 1,000 |
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VN4012L-G | Bulk | 6 Weeks | 1,000 |
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VN4012L-G | 3,000 |
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VN4012L-G | 77 | 1 |
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VN4012L-G | Bag | 1,000 |
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VN4012L-G | 7 Weeks | 1,000 |
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VN4012L-G | 3,000 |
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Microchip Technology Inc VN4012L |
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VN4012L |
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Vishay Siliconix VN4012LTRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,160MA I(D),TO-92 |
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VN4012L | 491 |
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Vishay Siliconix VN4012B-2VN4012B-2 |
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VN4012B-2 | 33 |
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VN4012 Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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VN4012 | Supertex | N-Channel Enhancement-Mode Vertical DMOS FETs | Original | 447.07KB | 2 | |||
VN4012L | Siliconix | N-Channel Enhancement-Mode MOSFET Transistors | Original | 60KB | 4 | |||
VN4012L | Supertex | N-Channel Enhancement-Mode Vertical DMOS FETs | Original | 18.68KB | 2 | |||
VN4012L | Supertex | N-Channel Enhancement-Mode Vertical DMOS FETs | Original | 448.89KB | 2 | |||
VN4012L |
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Transistor Mosfet N-CH 400V 0.16A 3TO-226AA | Original | 67.73KB | 5 | |||
VN4012L | Vishay Siliconix | Shortform Siliconix Datasheet | Short Form | 181.85KB | 1 | |||
VN4012L-G | Supertex | Transistor Mosfet N-CH 400V 0.16A 3TO-92 | Original | 446.83KB | 2 | |||
VN4012LGP013 | Supertex | Transistor Mosfet N-CH 65V 1.15A 3(30260) T/R | Original | 209.64KB | 10 | |||
VN4012LP014 | Supertex | Transistor Mosfet N-CH 400V 0.16A 3TO-92 T/R | Original | 446.83KB | 2 | |||
VN4012L-TR1 |
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Transistor Mosfet N-CH 400V 0.16A 3TO-226AA T/R | Original | 67.73KB | 5 |
VN4012 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Tem ic VN3515L/VN4012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number V BR DSS M in (V ) rosion) Max (Q) V c s u to iV ) I d (A ) V N 3515L 350 15 @ V G,s = 4.5 V 0.6 to 1.8 0.15 V N 40Î2L 400 12 @ V(3s = 4.5 V |
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VN3515L/VN4012L 3515L P-38281--Rev. 15-Aug-94 P-38281-- | |
40128Contextual Info: SILICONIX INC IflE D • ÖS54735 0014110 b VN4012 SERIES JLfTZ'Siliccsnix M in c o r p o r a te d N-Channel E n h a n ce m e n t-M o d e MOS T ra n sisto rs T -'27-23 PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS rDS(ON) ( il) (V) Id (A) PACKAGE VN4012L 400 |
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S54735 VN4012 VN4012L VN4012B O-205AF VN3515L VNDV40 250X1 40128 | |
4012LContextual Info: VN3515L/VN4012L_ VISHAY T Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M î n ( V ) r D S (o n) M a x ( Q ) V G S (th> ( V ) V N3515L 350 15 9 V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L |
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VN3515L/VN4012L_ N3515L VN4012L S-04379-- 16-Jul-01 VN3515L7VN4012L 4012L | |
Contextual Info: Supertex inc. VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds |
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VN4012 DSFP-VN4012 B082013 | |
Contextual Info: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination |
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VN4012 DSPD-3TO92N3, D080408. DSFP-VN4012 A102108 | |
Contextual Info: fíl Supertex inc. VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs BVDSS/ R DS ON ^GS(th) B V dgs (max) (max) 350V 15Q 1.8V 400V 12£2 1.8V 1Í Ordering Information Order Number / Package TO-39 TO-92 0.15 A — VN3515L 0.15A VN4012B VN4012L |
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VN3515L VN4012L VN4012B 100mA 100mA, TN06D | |
VN3515L
Abstract: VN4012L
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VN3515L/VN4012L VN3515L VN4012L 18-Jul-08 VN3515L VN4012L | |
4012L
Abstract: 125OC VN4012 VN4012L-G
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VN4012 DSFP-VN4012 A041309 4012L 125OC VN4012 VN4012L-G | |
TN2540
Abstract: VN3515 VN3515L VN4012 VN4012L
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VN3515L VN4012L VN4012 100mA 160mA TN2540 VN3515 VN3515L VN4012 VN4012L | |
VN3515L
Abstract: VN4012L
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VN3515L/VN4012L VN3515L VN4012L P-38281--Rev. VN3515L VN4012L | |
4012L
Abstract: VN3515L VN4012L
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VN3515L/VN4012L VN3515L VN4012L 08-Apr-05 4012L VN3515L VN4012L | |
Contextual Info: VN3515L VN4012L Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information JÎ Order Number / Package BVDSS/ ^D S O N ^ G S (th ) b v dgs (max) (max) 350V 150 1.8V 0.15A VN3515L 400V 12 fl 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology |
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VN3515L VN4012L capab50 VN3515 VN4012 300ns TN2540 | |
VN4012B
Abstract: p-channel DMOS 125 diode VN3515 VN3515L VN4012 VN4012L
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VN3515L VN4012L VN4012B 100mA 100mA, VN4012B p-channel DMOS 125 diode VN3515 VN3515L VN4012 VN4012L | |
4012l
Abstract: marking code diode 04 to-18 siliconix VN3515L VN4012L
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VN3515L/VN4012L VN3515L VN4012L Nov-00 4012l marking code diode 04 to-18 siliconix VN3515L VN4012L | |
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VN3515L
Abstract: VN4012L AUG94
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VN3515L/VN4012L VN3515L VN4012L P-38281--Rev. 15-Aug-94 VN3515L VN4012L AUG94 | |
TN3512LContextual Info: VNDV1 DIE N-Channel Enhancement-Mode MOS Transistor J 3 T in co rp o ra ted VNDV1CHP* Gate Pad 0.005 0.127 0.007 (0.178) TN3512L TN4012L VN3515L VN4012L ‘ Meets or exceeds specification for all part numbers listed below Source Pad For additional design information please consult the |
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TN3512L TN4012L VN3515L VN4012L VNDV40. | |
Contextual Info: Tem ic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS VN3515L VN4012L r DS(on) M ax (£2) (V ) 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 400 12 @ V GS = 4.5 V 0.6 to 1.8 0.16 Applications |
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VN3515L/VN4012L VN3515L VN4012L P-38281--Rev. | |
4012LContextual Info: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / ^DS ON ^GS(th) ^D(ON) Order Number / Package b v dgs (max) (max) (min) TO-39 TO-92 3 5 0V 15Q 1.8V 0.15A — V N 3 51 5L 4 0 0V 12Q 1.8V 0.15A V N 4 01 2B VN 4012L |
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VN3515L VN4012L 4012L 300ns 4012L | |
Contextual Info: Temic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) rns^n) Max (Q) VGS(th) Id (A) (V) VN3515L 350 15 @ V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ V GS = 4.5 V 0.6 to 1.8 |
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VN3515L/VN4012L VN3515L VN4012L P-38281-- | |
VN4012Contextual Info: VN4012 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN4012 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si |
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VN4012 VN4012 A020309 | |
Contextual Info: ÇjpSupertex inc. vn4oi 2l N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d s <o n Order Number / Package ^G S lh ) (max) b v dgs (max) TO-39 TO-92 350V 15fi 1.8V — VN3515L 400V 12 fi 1.8V VN4012B VN4012L Features Advanced DMOS Technology |
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VN4012B VN3515L VN4012L 100mA, 100mA VN4012 160mA | |
Contextual Info: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities |
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VN4012 DSFP-VN4012 A041309 | |
Contextual Info: VN3515L VN4012L Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs If b v dss/ ^ G S th I d (ON) (max) (min) Order Number / Package TO-92 350V 15& 1.8V 0.15A VN3515L 400V 12£2 1.8V 0.15A VN4012L Features Advanced DMOS Technology |
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VN3515L VN4012L 100mA 100mA, 160mA | |
VN4012Contextual Info: Supertex inc. VN4012 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN4012 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description |
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VN4012 VN4012 A031610 |