VP2110ND Search Results
VP2110ND Price and Stock
Microchip Technology Inc VP2110NDTransistor MOSFET PCH 100V 500mA DIE (Alt: VP2110ND) |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
VP2110ND | 6 Weeks | 1 |
|
Buy Now |
VP2110ND Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|---|
VP2110ND | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 30.2KB | 4 | |||
VP2110ND | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | 463.83KB | 4 |
VP2110ND Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
VP2106
Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
|
Original |
VP2106 VP2110 O-236AB* VP2106N3 -100V VP2110K1 VP2110ND OT-23: OT-23. VP2106 VP2106N3 VP2110 VP2110K1 VP2110ND | |
Contextual Info: VP2106 VP2110 Superte jc¡ne. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV Order Number / Package ^DS ON ' d (ON) (max) (min) TO-92 TO-236AB* Diet 12fi -0.5A VP2106N3 — VP2106ND P1 A * VP2110ND where * = 2-week alpha date code |
OCR Scan |
VP2106 VP2110 VP2106N3 O-236AB* VP2110K1 VP2106ND VP2110ND OT-23: -100V VP2106/VP2110 | |
Contextual Info: ^ Supertex inc. VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs BVdss/ ^DS ON B V dos (max) -60V 120 -100V If Ordering Information_ _ _ -0.5A -0.5A 120 Order Number / Package TO-92 DICE* TO-236AB* VP2106N3 VP2106ND - VP2110ND VP2110N3 |
OCR Scan |
VP2106 VP2110 -100V VP2106N3 VP2106ND OT-23: O-236AB* VP2110ND VP2110N3 VP2110K1 | |
MARKING P1a
Abstract: VP2110N3
|
OCR Scan |
VP2106 VP2110 VP2106N3 VP2110N3 -100V VP2106ND VP2110ND O-236AB* VP2110K1 OT-23: MARKING P1a VP2110N3 | |
Contextual Info: VP2106 VP2110 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / ^DS ON ^D(ON) b v dgs (max) (min) TO-92 TO-236AB* Diet -60V 12& -0.5 A VP2106N3 — — -100V 12& -0.5 A — VP2110K1 VP2110ND Product marking for SOT-23: |
OCR Scan |
VP2106 VP2110 O-236AB* VP2106N3 -100V VP2110K1 VP2110ND OT-23: VP2106/VP2110 | |
jedec package TO-236AB
Abstract: TS 100-12 VP2110 VP2110K1-G VP2110ND
|
Original |
VP2110 VP2110 DSFP-VP2110 A041309 jedec package TO-236AB TS 100-12 VP2110K1-G VP2110ND | |
VP2110N3Contextual Info: SUPERTEX INC blE D • 87732^ DDD32bS ÌSfl « S T X Super te x inc. VP21A P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVoss / BVdos Rd8 ON (max) If Standard Commercial Devices Order Number / Package TO-92 DICE* -40V 120 -0.5A VP2104N3 |
OCR Scan |
DDD32bS VP21A -100V VP2104N3 VP2106N3 VP2110N3 VP2104ND VP2106ND VP2110ND 00032bfl | |
jedec package TO-236AB
Abstract: vp2110k1-g P1AW mos fet marking k1
|
Original |
VP2110 VP2110 O-236AB OT-23) O-236, DSFP-VP2110 A020408 jedec package TO-236AB vp2110k1-g P1AW mos fet marking k1 | |
Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — — P1A❋ -100V 12Ω -0.5A |
Original |
VP2106 VP2110 O-236AB* OT-23: VP2106N3 -100V VP2110K1 VP2110ND OT-23. | |
VP2110K1-G
Abstract: sot-23 MARKING CODE GS 5
|
Original |
VP2110 DSFP-VP2110 A020408 VP2110K1-G sot-23 MARKING CODE GS 5 | |
a0124Contextual Info: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
Original |
VP2110 DSFP-VP2110 A012409 a0124 | |
VP2106
Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
|
Original |
VP2106 VP2110 O-236AB* OT-23: VP2106N3 -100V VP2110K1 VP2110ND OT-23. VP2106 VP2106N3 VP2110 VP2110K1 VP2110ND | |
VP2110N3
Abstract: VP21A vp2104
|
OCR Scan |
VP21A -100V VP2104N3 VP2106N3 VP2110N3 VP2104ND VP2106ND VP2110ND VP21A vp2104 | |
Contextual Info: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-to-drain diode High input impedance and high gain |
Original |
VP2110 VP2110 DSFP-VP2110 A041309 | |
|
|||
VP2110
Abstract: VP2110K1 VP2110ND VP2106 VP2106N3 VP2106ND
|
Original |
VP2106 VP2110 O-236AB* OT-23: VP2106N3 VP2106ND -100V VP2110K1 VP2110ND OT-23. VP2110 VP2110K1 VP2110ND VP2106 VP2106N3 VP2106ND |